2014 44th European Microwave Conference 2014
DOI: 10.1109/eumc.2014.6986773
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A 250 nm CMOS / LDMOS Pulse-Width Modulator and Driver for space-borne GaN switch mode power amplifiers in P-Band

Abstract: In this paper, the design of a single-chip RF PulseWidth Modulator and Driver (PWMD) aimed at exciting a 80 W class-E GaN high-power stage at 435 MHz is described. For the required buffer size, avoiding potential ringing of the pulses within the buffer structure presents a major challenge in the design process. Therefore, a smaller chip capable of driving capacitive loads of up to 5 pF was initially designed, fabricated and tested. An approach based on 3D EM simulations was used to validate the test results. B… Show more

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Cited by 2 publications
(4 citation statements)
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“…8-PSK or π/4-DQPSK) with required values of the dynamic range in excess of 10 dB. However, using the approach of [5] by means of combining several transmit chains the dynamic range can be improved by 6 dB provided that the dynamic range of a PWMD is larger than 3.5 dB.…”
Section: Test Chip Measurement Results At 435 Mhzmentioning
confidence: 99%
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“…8-PSK or π/4-DQPSK) with required values of the dynamic range in excess of 10 dB. However, using the approach of [5] by means of combining several transmit chains the dynamic range can be improved by 6 dB provided that the dynamic range of a PWMD is larger than 3.5 dB.…”
Section: Test Chip Measurement Results At 435 Mhzmentioning
confidence: 99%
“…This degradation of the dynamic range is related to the fact that the rise and fall times of the enlarged chip are slightly larger than for the test chip. Still, the dynamic range is sufficient to enlarge the dynamic range as proposed in [5]. Other approaches [9] aiming at driving final stage devices with output power levels of at least 10 W have realized a slightly higher dynamic range (i.e.…”
Section: Enlarged Measurement Results With Passive Loadmentioning
confidence: 99%
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