A 27GHz, 31dBm power amplifier in a 0.25&amp;#x03BC;m SiGe:C BiCMOS technology

Essing, J.; Leenaerts, D.M.W.; Mahmoudi, Reza

doi:10.1109/bctm.2014.6981301

Cited by 10 publications

(4 citation statements)

References 8 publications

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“…BiCMOS technology is intrinsically an example of integration, since it combines bipolar and field-effect transistors on the same substrate. The technology nodes typically used at mm-wave range from 250 nm with f T around 220 GHz [46], down to 90 nm with f T of 300 GHz [47]. BiCMOS can be used for analogue Intermediate Frequency (IF) and baseband functions as well, and the CMOS part supports Digital Signal Processing (DSP) functions.…”

Section: B Si and Sige Technologiesmentioning

confidence: 99%

A Review of Technologies and Design Techniques of Millimeter-Wave Power Amplifiers

Camarchia

Quaglia

Piacibello

et al. 2020

IEEE Trans. Microwave Theory Techn.

139

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This paper reviews the state-of-the-art of millimeterwave power amplifiers, focussing on broadband design techniques. An overview of the main solid-state technologies is provided, including Si, GaAs, GaN and other III-V materials, and both field-effect and bipolar transistors. The most popular broadband design techniques are introduced, before critically comparing through the most relevant design examples found in the scientific literature. Given the wide breadth of applications that are foreseen to exploit the millimeter-wave (mm-wave) spectrum, this contribution will represent a valuable guide for designers who need a single reference before adventuring in the challenging task of mm-wave power amplifier design. Index Terms-Broadband, millimeter wave, power amplifiers. I. INTRODUCTION T HE millimeter-wave (mm-wave) spectrum is attracting a great interest for applications such as 5G and future satellite communications that go well beyond the traditional niche of military and scientific use in terms of investments and potential revenues. The most attractive feature of mm-waves compared to the RF and microwave band is the huge spectrum availability that gives a great advantage in terms of capacity for telecommunication systems. Other advantages of mm-wave systems are the compact size of circuits, especially antennas, and the intrinsic easiness of frequency reuse thanks to the high free-space attenuations. There are also some advantages that are band-specific; for example, the very high attenuation in the 60 GHz band due to oxygen absorption that enables intrinsically secure communications. On the other hand, the very high frequency of operation poses significant challenges to system and circuit design. Similarly to what happens at lower frequency, one of the most critical circuit components is the power amplifier (PA). Its

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Section: B Si and Sige Technologiesmentioning

confidence: 99%

A Review of Technologies and Design Techniques of Millimeter-Wave Power Amplifiers

Camarchia

Quaglia

Piacibello

et al. 2020

IEEE Trans. Microwave Theory Techn.

139

View full text Add to dashboard Cite

show abstract

“…As mentioned before, commercial chips with the proposed architecture do not exist. Moreover, most reported single PA designs implemented in Si-based processes at these frequencies either have low output power (≤15 dBm) [10], [11], [12] or include lossy power combiners, which dramatically reduce the efficiency and limit the operation bandwidth [13], [14]. Therefore, an essential next step toward the implementation of the proposed architecture is to design a wideband and highpower PA-cell.…”

Section: Power Amplifier Unit Cellmentioning

confidence: 99%

A Wideband mm-Wave Watt-Level Spatial Power-Combined Power Amplifier With 26% PAE in SiGe BiCMOS Technology

Roev

Qureshi

Geurts

et al. 2022

IEEE Trans. Microwave Theory Techn.

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“…Moreover, the power gain output trade-off due to impedance matching makes it more challenging to achieve reasonable power gain from a single stage amplifier [15,16]. At mm-wave frequency spectrum, it is harder to achieve high output power level due to the low supply voltage that accompanies smaller technology nodes [17]. Besides, the technology shrinks causing the gate oxide become thinner and breakdown voltage become lower hence limit to get better output power at receiving end of the system [15].…”

Section: Mm-wave Challengementioning

confidence: 99%

A 28 GHz high efficiency fully integrated 0.18 µm combined CMOS power amplifier using power divider technique for 5G millimeter-wave applications

Hasan¹,

Murad²,

Bakar³

et al. 2020

Bulletin EEI

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A 28 GHz power amplifier (PA) using CMOS 0.18 µm Silterra process technology for milimeter wave applications is reported. Maximizing the power added efficiency (PAE) and output power are achieved by optimize the circuit with power divider and cascade configuration. In addition, reverse body bias is also employed for realizing excellent PAE and power consumption. A three stage CMOS PA with power combiner is designed and simulated. The simulation results show that the proposed PA consumes 62.56 mW and power gain (S21) of 8.08 dB is achieved at 28 GHz. The PA achieves saturated power (Psat) of 12.62 dBm and maximum PAE of 23.74% with output 1-dB compression point (OP1dB) 10.85 dBm. These results demonstrate the proposed power amplifier architecture is suitable for 5G applications.

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A 27GHz, 31dBm power amplifier in a 0.25μm SiGe:C BiCMOS technology

Cited by 10 publications

References 8 publications

A Review of Technologies and Design Techniques of Millimeter-Wave Power Amplifiers

A Review of Technologies and Design Techniques of Millimeter-Wave Power Amplifiers

A Wideband mm-Wave Watt-Level Spatial Power-Combined Power Amplifier With 26% PAE in SiGe BiCMOS Technology

A 28 GHz high efficiency fully integrated 0.18 µm combined CMOS power amplifier using power divider technique for 5G millimeter-wave applications

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