A 3.1–10.6 GHz Ultra-Wideband CMOS Low Noise Amplifier With Current-Reused Technique

Lin, Yiqing; Hsu, Shawn S. H.; Jin, Jun-De; Chan, Calvin M. L.

doi:10.1109/lmwc.2006.890503

Cited by 154 publications

(69 citation statements)

References 6 publications

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“…Therefore, v g can be approximately represented by (14). 2 3 1 2 3 2 3 2 3 1 2 3 1 2 3 2 3 2 3 1 2 3 1 2 3 ( )…”

Section: Design Philosophymentioning

confidence: 99%

“…Resistive feedback is frequently combined with inductive peaking [11,12], and an inductor coupled resonator is sometimes utilized in the feedback loop [13]. The wideband input matching network can also be designed using a high-pass filter [14], where an inputmatching network is devised separately with the cascode amplifier, but the parasitics can lead to a fluctuation of input-matching characteristics. The common-gate configuration can be easily used for wide input impedance matching [15].…”

Section: Introductionmentioning

confidence: 99%

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Highly Linear Wideband LNA Design Using Inductive Shunt Feedback

Jeong¹,

Cho

Min³

2014

JSTS:Journal of Semiconductor Technology and Science

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Abstract-Low noise amplifier (LNA) is an integral component of RF receiver and frequently required to operate at wide frequency bands for various wireless system applications. For wideband operation, important performance metrics such as voltage gain, return loss, noise figure and linearity have been carefully investigated and characterized for the proposed LNA. An inductive shunt feedback configuration is successfully employed in the input stage of the proposed LNA which incorporates cascaded networks with a peaking inductor in the buffer stage. Design equations for obtaining low and high impedance-matching frequencies are easily derived, leading to a relatively simple method for circuit implementation. Careful theoretical analysis explains that input impedance can be described in the form of second-order frequency response, where poles and zeros are characterized and utilized for realizing the wideband response. Linearity is significantly improved because the inductor located between the gate and the drain decreases the third-order harmonics at the output. Fabricated in 0.18 µm CMOS process, the chip area of this wideband LNA is 0.202 mm 2 , including pads. Measurement results illustrate that the input return loss shows less than -7 dB, voltage gain greater than 8 dB, and a little high noise figure around 6-8 dB over 1.5 -13 GHz. In addition, good linearity (IIP3) of 2.5 dBm is achieved at 8 GHz and 14 mA of current is consumed from a 1.8 V supply.

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“…Therefore, v g can be approximately represented by (14). 2 3 1 2 3 2 3 2 3 1 2 3 1 2 3 2 3 2 3 1 2 3 1 2 3 ( )…”

Section: Design Philosophymentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Highly Linear Wideband LNA Design Using Inductive Shunt Feedback

Jeong¹,

Cho

Min³

2014

JSTS:Journal of Semiconductor Technology and Science

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show abstract

“…With the development of numerical data communications, the demand of high speed and wide-band circuit increases rapidly [7][8][9][10][11].…”

Section: Introductionmentioning

confidence: 99%

Wideband Impedance Matching in Transient Regime of Active Circuit Using Lossy Nonuniform Multiconductor Transmission Lines

Amharech¹,

Kabbaj²

2012

PIER C

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Abstract-This paper focuses on the electromagnetic compatibility domain, coupling in microwave circuits and wideband (WB) impedance matching in time domain using a purely temporal method, such as the centered-points Finite Difference Time Domain (FDTD). The paper here presents a new approach of WB impedance matching in transient regime and coupling context, of active circuits such as multiple complex nonlinear components (represented here by metal semiconductor fieldeffect transistors (MESFETs)), using Nonuniform Multiconductor Transmission Lines (NMTL) with frequency dependent losses and FDTD as modeling method. The FDTD method has several positive aspects such as the ease to introduce nonlinear components in the algorithm, the ease to use NMTL and the gain in simulation time and memory space. Also the FDTD method allows the study of WB impedance matching in time domain without recourse to the frequency domain. Systematic comparisons of the results of this method with those obtained by PSpice are done to validate this study. These comparisons show a good agreement between the method presented here and PSpice. The technique presented in this paper shows higher efficiency and ease to implement when compared to PSpice in regard to the treatment of frequency dependent losses, or shapes of transmission lines.

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“…The current-reused architectures with their outstanding trait, i.e. preserving the power consumption, are also used in the UWB design [5]. The noise and distortion cancellation techniques which have been used in [1,2] are going to become the unique trends toward satisfying stringent features of an LNA that are the NF and third-order intercept point (IP3).…”

Section: Introductionmentioning

confidence: 99%

A linear current-reused LNA for 3.1-10.6GHz UWB receivers

Mirvakili

Yavari

Raissi

2008

IEICE Electron. Express

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An ultra-wide-band CMOS low-noise amplifier (LNA) employing a common-gate (CG) stage for wideband input matching is presented. This LNA utilizes the concurrent noise and distortion canceling techniques. Moreover, the current-reused technique exploiting the passive network instead of using the active and power consuming element is introduced to preserve the power consumption while contributing to the noise canceling trend. In other words, this topology is capable of canceling the noise effect of input transistor without consuming much current. Simulation results based on a 0.13 μm standard RFCMOS technology shows that a power gain of 13.5 dB and the noise figure of 2.7-4.2 dB over the −3-dB bandwidth of 2.6-10.7 GHz. With the presence of a weak inversion biased transistor, an input third-order intercept point (IIP3) of +5 dBm is achieved. The power consumption is 13.5 mW from a single 1.2 V power supply.

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A 3.1–10.6 GHz Ultra-Wideband CMOS Low Noise Amplifier With Current-Reused Technique

Cited by 154 publications

References 6 publications

Highly Linear Wideband LNA Design Using Inductive Shunt Feedback

Highly Linear Wideband LNA Design Using Inductive Shunt Feedback

Wideband Impedance Matching in Transient Regime of Active Circuit Using Lossy Nonuniform Multiconductor Transmission Lines

A linear current-reused LNA for 3.1-10.6GHz UWB receivers

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