A 3-10 GHz bandwidth low-noise and low-power amplifier for full-band UWB communications in 0.25- μm SiGe BiCMOS technology

Shiramizu, Nobuhiro; Masuda, Takatsugu; Tanabe, M.; Washio, Katsuyoshi

doi:10.1109/rfic.2005.1489204

Cited by 35 publications

(11 citation statements)

References 3 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The measured DC power consumption was 98 mW and measured input P1dB at 3.1, 7, and 10.6 GHz were , , and , respectively. The LNA achieved minimum group delay variation and appropriate NF for UWB band, as shown in Table I [7], [8].…”

Section: Measured Resultsmentioning

confidence: 97%

Low Noise Group Delay Equalization Technique for UWB InGaP/GaAs HBT LNA

Ahn

Ishikawa

Honjo

2010

IEEE Microw. Wireless Compon. Lett.

View full text Add to dashboard Cite

This letter describes an ultra-wideband (UWB) LNA designed with the aim of achieving both flat group delay variation and a low noise characteristic. Negative group delay (NGD) circuits are good candidates for compensating the group delay variation; however, they have inherent resistances that deteriorate the noise figure (NF). Therefore, an NGD circuit is applied to the latter part of a prototype amplifier. Similarly, a noise matching circuit is applied to the group-delay-equalized amplifier with consideration for its effect on the group delay variation. The LNA with an NGD circuit and a noise matching circuit is fabricated on an InGaP/GaAs MMIC substrate. The fabricated LNA achieved a group delay variation of 11.2 ps, a NF of 1.95-3.54 dB, a maximum gain of 12.3 dB, and a gain variation of 1.

show abstract

Section: Measured Resultsmentioning

confidence: 97%

Low Noise Group Delay Equalization Technique for UWB InGaP/GaAs HBT LNA

Ahn

Ishikawa

Honjo

2010

IEEE Microw. Wireless Compon. Lett.

View full text Add to dashboard Cite

show abstract

“…The comparison of the previously reported LNAs and this work are summarized in Table I. The performance of LNA can be evaluated by a figure-of-merit (FOM) defined in [18] and it can also be evaluated by a GBP [19]. …”

Section: Resultsmentioning

confidence: 99%

Q-band low noise amplifiers using a 0.15μm MHEMT process for broadband communication and radio astronomy applications

Weng

Lin

Chang

et al. 2008

2008 IEEE MTT-S International Microwave Symposium Digest

View full text Add to dashboard Cite

Two Q-band low noise amplifiers using a 0.15-µm InGaAs MHEMT process for broadband communication and radio astronomy applications are presented in this paper. Between 37 and 53 GHz, the LNA1 features a small signal gain of higher than 31 dB, a noise figure of better than 3.5 dB with a minimum noise figure of 2.8 dB at 44 GHz, and a gainbandwidth product (GBP) of 679 GHz. Between 32 and 50 GHz, the LNA2 features a small signal gain of higher than 28 dB, a noise figure of better than 3.2 dB with a minimum noise figure of 2.6 dB at 44 GHz, and a GBP of 569 GHz. The chip sizes of the LNA1 and LNA2 are both 2 1 mm 2 . The LNAs demonstrate broad bandwidth, high gain, low noise figure, and compact chip size, and they will be further applied to a few broadband receivers for communications and radio astronomy applications. Moreover, this work demonstrates the highest GBP among all the reported Q-band LNAs.Index Terms -Broadband, high gain, InGaAs, MHEMT, low noise figure.978-1-4244-1780-3/08/$25.00

show abstract

“…The performance of LNA can be assessed by the FOM [12] related to gain-bandwidth product (GBP), noise figure and dc consumption. The definition of FOM and GBP are shown below:…”

Section: Measurementsmentioning

confidence: 99%

A high gain E-band MMIC LNA in GaAs 0.1-μm pHEMT process for radio astronomy applications

Lee

Chiong

Niu

et al. 2014

2014 9th European Microwave Integrated Circuit Conference

View full text Add to dashboard Cite

In this paper, we present an E-band MMIC low noise amplifier (LNA) using 0.1-ȝm GaAs pHEMT technology operating in 1V and 2V drain voltage. The E-band LNA shows small signal gain of 28 dB from 62 to 77 GHz with DC power consumption 44 mW. Noise measurement conducts in the package shows average noise figure about 4.5 dB from 75 to 90 GHz. The figure-of-merit (FOM) is 212.5 (GHz/mW), which is highest compared with other LNAs using 0.1-ȝm GaAs pHEMT technology.

show abstract

A 3-10 GHz bandwidth low-noise and low-power amplifier for full-band UWB communications in 0.25- μm SiGe BiCMOS technology

Cited by 35 publications

References 3 publications

Low Noise Group Delay Equalization Technique for UWB InGaP/GaAs HBT LNA

Low Noise Group Delay Equalization Technique for UWB InGaP/GaAs HBT LNA

Q-band low noise amplifiers using a 0.15μm MHEMT process for broadband communication and radio astronomy applications

A high gain E-band MMIC LNA in GaAs 0.1-μm pHEMT process for radio astronomy applications

Contact Info

Product

Resources

About

A 3-10 GHz bandwidth low-noise and low-power amplifier for full-band UWB communications in 0.25- μm SiGe BiCMOS technology

Cited by 35 publications

References 3 publications

Low Noise Group Delay Equalization Technique for UWB InGaP/GaAs HBT LNA

Low Noise Group Delay Equalization Technique for UWB InGaP/GaAs HBT LNA

Q-band low noise amplifiers using a 0.15&#x003BC;m MHEMT process for broadband communication and radio astronomy applications

A high gain E-band MMIC LNA in GaAs 0.1-&#x03BC;m pHEMT process for radio astronomy applications

Contact Info

Product

Resources

About

Q-band low noise amplifiers using a 0.15μm MHEMT process for broadband communication and radio astronomy applications

A high gain E-band MMIC LNA in GaAs 0.1-μm pHEMT process for radio astronomy applications