A 3 bit K/Ka band MMIC phase shifter

Schindler, Fred; Miller, M.E.

doi:10.1109/mcs.1988.197298

Cited by 18 publications

(6 citation statements)

References 4 publications

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“…R F MEMS technology is a key innovation for building low-loss phase shifters and other control circuits at millimeter-wave frequencies. Traditional electronic phase shifters are generally built on GaAs and use MESFET's [1] or pHEMT's as switches. These devices switch between different line lengths or switch between different low-and high-pass filters to achieve the desired phase shift.…”

Section: Introductionmentioning

confidence: 99%

Ka-band RF MEMS phase shifters

Pillans

Eshelman

Malczewski

et al. 1999

IEEE Microw. Guid. Wave Lett.

117

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As the need for low-loss phase shifters increases, so does the interest in radio frequency (RF) MEMS as a solution to provide them. In this paper, progress in building low loss Ka-band phase shifters using RF MEMS capacitive switches is demonstrated. Using a switched transmission line 4-bit resonant phase shifter, an average insertion loss of 2.25 dB was obtained with better than 15-dB return loss. A similar 3-bit phase shifter produced an average insertion loss of 1.7 dB with better than 13-dB return loss. Both devices had a phase error of less than 13 in the fundamental states. To our knowledge, these devices represent the lowest loss Ka-band phase shifters reported to date.

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Section: Introductionmentioning

confidence: 99%

Ka-band RF MEMS phase shifters

Pillans

Eshelman

Malczewski

et al. 1999

IEEE Microw. Guid. Wave Lett.

117

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show abstract

“…It had been proposed to use the parasitic FKT I capacitance as part of the phase-setting capacitance, and a phase shifter with a two-octave bandwidth that operates up to X-band has been reported. High-frequency operation using this method was achieved and phase shifters operating between K-and Ka-band were reported [6].…”

Section: Introductionmentioning

confidence: 98%

A high‐pass/lowpass phase shifter with resistive matching networks

Iyama

Iida

Ishida

et al. 1996

Electron Comm Jpn Pt II

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This paper proposes a high-pass/lowpass phase shifter with improved reflection and phase-shift characteristics using resistive matching networks. The circuit configuration, reflection characteristics, phase-shifterrorreduction methods, and the design results are described. The relationship between the reflection of the single-pole, double-throw (SPDT) switch and the phase-shift error is discussed in the high-passflowpass phase shifter using filters to switch the SPDT switch. The reflection of the SPDT switch caused by the parasitic resistance of the switching device is investigated, and an impedance matching method using the resistive matching networks is proposed to reduce reflection. The calculation results for an S-band phase shifter with the resistive matching networks show that the matching can be achieved even for switching devices with resistance and that the phaseshift error can be reduced. An S-band, 90" single-bit phase shifter has been designed and a low return loss of better than 19 dB and a phase-shift error of less than 4" are achieved, which confirms the usefulness of the resistive matching networks.

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“…These are ferrite [2] and electronic switch phase shifters. Electronic switch phase shifters that use digital phase shift steps can be basically categorised into four types [3,4], which are switched line [5,6], reflection [7,8], loaded line [9,10] and switched network [3,11] phase shifters. All of these types have been investigated in detail from different aspects [3,4,9].…”

Section: Introductionmentioning

confidence: 99%

Triple stub circuit topology as simultaneous insertion phase, amplitude and impedance control circuit for phased array applications

Ünlü¹,

Demır

Akın

2012

IET Microw. Antennas Propag.

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This study shows that the well-known triple stub circuit topology can also be used for controlling the insertion phase and amplitude of a given signal simultaneously, as well as preserving its impedance transformation ability. The triple stub circuit topology, which is nothing but an extension of the conventional double stub loaded-line phase shifter, results in one more degree of freedom to its solution when it is solved for its insertion phase. This additional degree of freedom not only brings the impedance transformation ability, but also allows tuning the circuit into a resonator at the frequency of interest whose quality factor can also be adjusted. This result is employed for controlling the amplitude of the output signal to any desired level, which is achieved using only low-loss transmission lines and shown to be true for any non-zero transmission line losses. The measurements of the fabricated sample circuits verify that it is possible to control simultaneously the insertion phase between 0 and 3608 and the amplitude from 20.8 to ,215 dB, whereas the input return loss is always kept better than 215 dB as an example of their impedance transformation capabilities.

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A 3 bit K/Ka band MMIC phase shifter

Cited by 18 publications

References 4 publications

Ka-band RF MEMS phase shifters

Ka-band RF MEMS phase shifters

A high‐pass/lowpass phase shifter with resistive matching networks

Triple stub circuit topology as simultaneous insertion phase, amplitude and impedance control circuit for phased array applications

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