A 300mm CMOS-compatible PECVD silicon nitride platform for integrated photonics with low loss and low process induced phase variation

Saseendran, Sandeep S.; Kongnyuy, Tangla D.; Figeys, Bruno; Buja, Federico; Troia, Benedetto; Kerman, Sarp; Marinins, Aleksandrs; Jansen, Roelof; Rottenberg, Xavier; Tezcan, Deniz Sabuncuoglu; Soussan, Philippe

doi:10.1364/ofc.2019.m1c.4

Cited by 11 publications

(10 citation statements)

References 4 publications

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“…We note that the coupling loss was as high as ∼15 dB∕facet, mainly due to imperfect polishing of the facets (Ultrapol polisher); therefore, inverse tapers will be used in future devices to reduce coupling loss. Although we used LPCVD for depositing Si 3 N 4 , which requires processing temperature around 800°C and thus making it incompatible with the back-end-of-the-line (BEOL) CMOS processes [19,50,51], to make the device fully compatible with CMOS electronics we can equally use the well-established plasma-enhanced chemical vapor deposition (PECVD)-based silicon nitride layer [19,24,50,51]. The schematic of the waveguide cross section and an SEM image are shown in Figs.…”

Section: Resultsmentioning

confidence: 99%

Nonlinear silicon photonics on CMOS-compatible tellurium oxide

et al. 2020

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Silicon photonics is coming of age; however, it is still lacking a monolithic platform for optical sources and nonlinear functionalities prompting heterogeneous integration of different materials tailored to different applications. Here we demonstrate tellurium oxide as a complementary metal oxide semiconductor silicon photonics platform for nonlinear functionalities, which is already becoming an established platform for sources and amplifiers. We show broadband supercontinuum generation covering the entire telecom window and show for the first time to our knowledge third-harmonic generation in its integrated embodiment. Together with the nowavailable lasers and amplifiers on integrated TeO 2 this work paves the way for a monolithic TeO 2-based nonlinear silicon photonics platform.

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Section: Resultsmentioning

confidence: 99%

Nonlinear silicon photonics on CMOS-compatible tellurium oxide

et al. 2020

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“…2008 [66] 2000 × 140 633 25-50 0.2 2011 [60] 2800 × 100 1550 500 0.09 2013 [67] 800 × 220 900 -0.62 2013 [68] 700 × 100 600 35 0.51 2013 [63] 1800 × 190 1550 115 0.04 2013 [69] 4000 × 2500 3700 200 2.1 2014 [70] 1000 × 400 1270 -0.32 2015 [71] 2700 × 950 2600 230 0.60 2015 [61] 2000 × 200 1550 50 0.3 2016 [72] 1150 × 1350 1598 238 -2017 [73] 2500 × 730 1550 115 0.008 ± 0.001 2019 [74] 350 × 180 532 / 1.36…”

Section: Silica Waveguidesmentioning

confidence: 99%

Silicon Photonic Platform for Passive Waveguide Devices: Materials, Fabrication, and Applications

Zhang

Qiu

et al. 2020

Adv Materials Technologies

154

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Silicon photonics has attracted tremendous interest from academia and industry, as the fabrication of the silicon family of photonic devices is mostly compatible with the microelectronics process using complementary metal‐oxide semiconductors (CMOS). Herein, three silicon‐family materials are discussed: silicon, silicon nitride, and silica. In addition, hybrid integration with a 2D material, graphene, is examined. First, the material and waveguide properties are reviewed. Second, typical fabrication processes for waveguide devices are introduced. Subsequently, a variety of passive waveguide devices, operating at different physical dimensions covering wavelength, polarization, and mode, are discussed. They correspond to fixed and tunable filters, polarization beam splitters and rotators, and mode conversion and multiplexing devices. These passive waveguide devices play important roles in a wide range of applications including telecom, interconnects, computing, sensing, quantum information processing, bio‐photonics, and energy.

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“…20 In particular, one of the difficulties that has been associated to phased arrays is the so-called coherence length of the waveguides. 21 Due to manufacturing induced variations in waveguide widths and ill-controlled layer thicknesses or side-wall roughness, the optical path length of waveguides shows small deviations from their design target, that can vary from waveguide to waveguide and chip to chip. In order to correct for these, phase tuners need not only to apply the phase required to generate a given field profile, as can be predictively determined with an algorithm, but also need to correct for these fabrication induced phase shifts.…”

Section: Lsfm With Silicon Nitride Photonic Integrated Circuitsmentioning

confidence: 99%

“…State-of-the-art fabrication tolerances have however undergone sufficient progress so that the coherence length of silicon nitride may be long enough to implement scaled phased arrays without requiring correction. 20,21 This is analyzed in more details below for the specific photonic integrated circuit (PIC) architecture considered here.…”

Section: Lsfm With Silicon Nitride Photonic Integrated Circuitsmentioning

confidence: 99%

“…Such path lengths have previously been measured to result in a phase error variance on the order of 0.3 rad 2 if fabricated in 300 mm technology and 1.5 rad 2 if fabricated in 200 mm technology. 21 Thus, the PIC should work without further correction if fabricated in 300 mm technology, while the consequences of phase errors in 200 mm technology warrant further investigation. Monte-Carlo simulations of the PIC show however that the performance penalties due to the increased phase error in 200 mm technology should also remain acceptable without further trimming.…”

Section: Lsfm With Silicon Nitride Photonic Integrated Circuitsmentioning

confidence: 99%

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Enhanced field-of-view high-resolution lattice light sheet microscopy with phased array beam formers

Witzens

Spehr

Dorpe

et al. 2021

Adaptive Optics and Wavefront Control for Biological Systems VII

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The data acquisition speed of point scanning microscopy techniques at sub-cellular resolution limits imaging of large samples, as sample stability and focus drift are becoming an issue. Therefore, light sheet fluorescent microscopy (LSFM) has become the method of choice for imaging cleared samples. However, this method still suffers from a trade-off between imaging depth and resolution, due to diffraction of the illuminating beam limiting the achievable field of view. After improvement of the latter with non-diffracting Bessel beams, lattice light sheet microscopy has further reduced the imaging point-spread-function (PSF) as well as substantially reduced illumination intensities and the resulting phototoxicity by enabling illumination of entire light sheets over large lateral extents. Here, we propose further improvement by generation of structured light sheets via phased arrays implemented as silicon nitride photonic integrated circuits (PICs). Beam generation with PICs results in much higher power efficiency than beam forming with conventional liquid crystal based spatial phase modulators, as it does not require the use of narrow blocking apertures. Moreover, this approach enables increased control over the generated field profile. Modeling of concrete PIC concepts indicates that sub-cellular resolution with mm scale imaging depths can be concomitantly achieved. Maintaining a small PSF across the entire light sheet, along the axis perpendicular to the direction of light propagation, is sacrificed in order to maintain it over an increased imaging depth along the beam propagation axis. Rapid lateral scanning of the illumination beam inside the plane of the light sheet is then obtained by scanning of the laser wavelength within the excitation spectrum of the target fluorescent protein, allowing for a wide bidirectional field-of-view with high resolution.

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A 300mm CMOS-compatible PECVD silicon nitride platform for integrated photonics with low loss and low process induced phase variation

Cited by 11 publications

References 4 publications

Nonlinear silicon photonics on CMOS-compatible tellurium oxide

Nonlinear silicon photonics on CMOS-compatible tellurium oxide

Silicon Photonic Platform for Passive Waveguide Devices: Materials, Fabrication, and Applications

Enhanced field-of-view high-resolution lattice light sheet microscopy with phased array beam formers

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