A 325 GHz Quadrature Voltage Controlled Oscillator With Superharmonic-Coupling

Song, Ho-Jin; Ajito, Katsuhiro; Yaita, Makoto; Kukutsu, Naoya

doi:10.1109/lmwc.2013.2270430

Cited by 16 publications

(3 citation statements)

References 12 publications

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“…Hence, it is expected that there exists an upper limit in the oscillation frequency. Similar to the CB case, the oscillation frequency can be obtained from (9) and (4) using the condition (10) The startup condition for the CE configuration can be found from (8) and (4) as (11) …”

Section: B Cb Versus Ce For Cross-coupling: Quantitative Comparisonmentioning

confidence: 99%

See 1 more Smart Citation

300-GHz InP HBT Oscillators Based on Common-Base Cross-Coupled Topology

Yun

Yoon

Kim

et al. 2014

IEEE Trans. Microwave Theory Techn.

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Two fundamental-mode oscillators operating around 300 GHz, a fixed-frequency oscillator and a voltage-controlled oscillator (VCO), have been developed in this work based on a 250-nm InP heterojunction bipolar transistor (HBT) technology. Both oscillators adopted the common-base configuration for the cross-coupled oscillator core, providing higher oscillation frequency compared to the conventional common-emitter cross-coupled topology. The fabricated fixed-frequency oscillator and the VCO exhibited oscillation frequency of 305.8 GHz and 298.1-316.1 GHz (18-GHz tuning range) at dc power dissipation of 87.4 and 88.1 mW, respectively. The phase noise of the fixed-frequency oscillator was measured to be dBc/Hz at 10 MHz offset. The peak output power of 5.3 dBm (3.8% dc-to-RF efficiency) and 4.7 dBm (3.2% dc-to-RF efficiency) were respectively achieved for the two oscillators, which are the highest reported power for a transistor-based single oscillator beyond 200 GHz. Index Terms-Frequency control, heterojunction bipolar transistors (HBT), voltage-controlled oscillators (VCO). 0018-9480

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Section: B Cb Versus Ce For Cross-coupling: Quantitative Comparisonmentioning

confidence: 99%

“…Based on the InP HBT technology, a fundamental-mode oscillator operating up to 573.1 GHz with an output power of dBm [10] and a 325-GHz VCO with an output power of dBm [11] have been reported. With the InP HEMT technology, a 330-GHz oscillator with an output power of dBm was reported in [12].…”

Section: Introductionmentioning

confidence: 99%

300-GHz InP HBT Oscillators Based on Common-Base Cross-Coupled Topology

Yun

Yoon

Kim

et al. 2014

IEEE Trans. Microwave Theory Techn.

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“…The cutoff frequencies of state-of-the-art compound semiconductor transistors on InP or GaAs substrates have already exceeded 1 THz [32], [33]. Utilizing such devices, several functional circuits and components, including amplifiers [34]- [37], oscillators [38]- [40], modulators/demodulators [41]- [43], and phase locked loops [44], [45], have been reported for THz applications. It is expected that, by deploying approaches similar to those used for ordinary RF and microwave electric appliances and equipment based on electric circuits and components, THz electronics will enable us to implement those applications more feasibly and practically [46]- [49].…”

Section: Introductionmentioning

confidence: 99%

Packages for Terahertz Electronics

Song

2017

Proc. IEEE

Self Cite

112

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| In the last couple of decades, solid-state device technologies, particularly electronic semiconductor devices, have been greatly advanced and investigated for possible adoption in various terahertz (THz) applications, such as imaging, security, and wireless communications. In tandem with these investigations, researchers have been exploring ways to package those THz electronic devices and integrated circuits for practical use. Packages are fundamentally expected to provide a physical housing for devices and integrated circuits (ICs) and reliable signal interconnections from the inside to the outside or vice versa. However, as frequency increases, we face several challenges associated with signal loss, dimensions, and fabrication. This paper provides a broad overview of recent progress in interconnections and packaging technologies dealing with these issues for THz electronics. In particular, emerging concepts based on commercial ceramic technologies, micromachining, and 3-D printing technologies for compact and lightweight packaging in practical applications are highlighted, along with metallic split blocks with rectangular waveguides, which are still considered the most valid and reliable approach.

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THz Applications

Rieh¹

2020

Introduction to Terahertz Electronics

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A 325 GHz Quadrature Voltage Controlled Oscillator With Superharmonic-Coupling

Cited by 16 publications

References 12 publications

300-GHz InP HBT Oscillators Based on Common-Base Cross-Coupled Topology

300-GHz InP HBT Oscillators Based on Common-Base Cross-Coupled Topology

Packages for Terahertz Electronics

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