A 3D model for thickness and diffusion capacitance of emitter-base junction determination in a bifacial polycrystalline solar cell under real operating condition

Mbodji, Senghane; Mbow, B.; Barro, F.I.; Sissoko, G.

doi:10.3906/fiz-0911-25

Cited by 14 publications

(3 citation statements)

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“…The space charge region of a solar cell can be considered as a plan capacitance [25,26]. This diffusion capacitance of the solar cell can be resulted to the charge carrier's density variation during their diffusion process in the space charge region [27,28].…”

Section: Diffusion Capacitancementioning

confidence: 99%

Influence of the Magnetic Field on the Diffusion Capacitance of a Serial Vertical Junction Silicon Solar Cell in Frequency Modulation

Boiro¹,

Dione²,

Toure³

et al. 2022

AJMP

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In this work, a theoretical study of the effect of the magnetic field on the minority charge carrier density and the diffusion capacity of a silicon solar cell with vertical junction in series in dynamic frequency regime, is done. From the relative continuity equation of the minority charge carriers' density we establish the boundary condition at the junction and the base medium. The expression of the density of minority carriers of charges in the base, allows us to determine the capacity of diffusion of the solar cell according to the magnetic field, the frequency of modulation, the wavelength of illumination and a junction recombination velocity. The profile of the diffusion coefficient allowed us to make a choice on the values of the magnetic field. These values of the magnetic field intensity will be fixed throughout this article. Each value of the magnetic field strength corresponds to a well-defined value of the resonance frequency. We obtained two ranges of illumination wavelengths from the minority charge carrier' density profile. The influence of the magnetic field on the diffusion coefficient, of the density of minority charge carriers in short-circuit and open-circuit conditions and of the diffusion capacity, for a specific wavelength, is theoretically studied.

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Section: Diffusion Capacitancementioning

confidence: 99%

Influence of the Magnetic Field on the Diffusion Capacitance of a Serial Vertical Junction Silicon Solar Cell in Frequency Modulation

Boiro¹,

Dione²,

Toure³

et al. 2022

AJMP

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“…The emitter of the solar cell is considered as a dead zone (not active). Thus the minority charge carrier density is derived from the continuity equation considering only the contribution of the base of the solar cell [6][7][8][9][10][11][12][13][14]:…”

Section: Excess Minority Carriers Densitymentioning

confidence: 99%

Three-dimensional Modeling Study of the Effect of Irradiation on a Single-face Polycrystalline Silicon Photocell under Multispectral Illumination

Dieye

Mbengue

Diéye

2022

PSIJ

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A three-dimensional modeling study of a polycrystalline silicon mono-facet photocell under multi-spectral illumination is presented highlighting the effect of irradiation energy (Φ) and damage coefficient (Kl) on the macroscopic parameters. Using the junction recombination rate Sf and the backside recombination rate (Sb) in a 3D modeling study, the continuity equation is solved. We determined the current density the current density and the photovoltage. This study takes into account the irradiation energy and the damage coefficient on the quality of the polycrystalline silicon photocell.

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“…When the solar cell is illuminated, there are simultaneously three major phenomena that happen: generation diffusion and recombination. These phenomena are described by the diffusionrecombination equation given by (Ly Diallo et al, 2012;Mbodji et al, 2011;Dione et al, 2009;Ly Diallo et al, 2008):…”

Section: Density Of Minority Charge Carriersmentioning

confidence: 99%

Influence of Temperature on the Electrical Parameters of a Vertical Parallel Junction Silicon Solar Cell under Polychromatic Illumination in Steady State

Dieme¹,

Zoungrana²,

Mbodji³

et al. 2014

RJASET

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This study presents a theoretical study of a vertical parallel junction solar cell under multispectral illumination in steady state. Based on the diffusion equation, the excess minority carrier's density is expressed and both photocurrent density and photovoltage are determined. For all these parameters we showed the effect of external temperature with respect to the operating point of the solar cell through the junction recombination velocity.

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A 3D model for thickness and diffusion capacitance of emitter-base junction determination in a bifacial polycrystalline solar cell under real operating condition

Cited by 14 publications

References 0 publications

Influence of the Magnetic Field on the Diffusion Capacitance of a Serial Vertical Junction Silicon Solar Cell in Frequency Modulation

Influence of the Magnetic Field on the Diffusion Capacitance of a Serial Vertical Junction Silicon Solar Cell in Frequency Modulation

Three-dimensional Modeling Study of the Effect of Irradiation on a Single-face Polycrystalline Silicon Photocell under Multispectral Illumination

Influence of Temperature on the Electrical Parameters of a Vertical Parallel Junction Silicon Solar Cell under Polychromatic Illumination in Steady State

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