A 40-GHz D-type flip-flop using AlGaAs/GaAs HBT's

Kuriyama, Y.; Sugiyama, Tohru; Hongo, Sadato; Akagi, J.; Tsuda, Koji; Iizuka, Norio; Obara, M.

doi:10.1109/4.466069

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Inp Hemt For Digital Ic's1

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Cited by 18 publications

(2 citation statements)

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“…Many electrical IC's reported for over 10-Gb/s transmission systems are Si-bipolar [6], GaAs MESFET [7], heterojunction bipolar transistor (HBT) [8], or high electron-mobility transistor (HEMT) devices. D-F/F is one of the most useful circuits and is used in digital IC's frequently.…”

Section: Inp Hemt For Digital Ic'smentioning

confidence: 99%

Optical repeater circuit design based on InAlAs/InGaAs HEMT digital IC technology

Yoneyama

Sano

Hagimoto

et al. 1997

IEEE Trans. Microwave Theory Techn.

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Section: Inp Hemt For Digital Ic'smentioning

confidence: 99%

Optical repeater circuit design based on InAlAs/InGaAs HEMT digital IC technology

Yoneyama

Sano

Hagimoto

et al. 1997

IEEE Trans. Microwave Theory Techn.

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“…2, the speed of the HBT can be increased by increasing the current density until the Kirk-effect occurs. On the other hand, the parasitic emitter resistor decreases the small-signal gain, and then a larger voltage swing is required for driving the ECL [4]. The internal voltage swing is unfavourable to high-speed operation.…”

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confidence: 99%