A 4H-SiC UV Phototransistor With Excellent Optical Gain Based on Controlled Potential Barrier

Benedetto, Luigi Di; Licciardo, Gian Domenico; Erlbacher, Tobias; Bauer, Anton J.; Rubino, Alfredo

doi:10.1109/ted.2019.2950986

Cited by 19 publications

(8 citation statements)

References 31 publications

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“…An estimation of the generated photocurrent per unit area is used to predict the photocurrent magnitude in the design. For this purpose, a responsivity report on a 2.6 mm 2 SiC UV photodetector in the same Fraunhofer IISB technology 26 – 28 is taken as a reference. The responsivity R ( λ ) is multiplied by the UV light source irradiance P o p t ( λ ) for a set of points followed by the uniform midpoint Riemann sum, resulting in …”

Section: Methodsmentioning

confidence: 99%

“… Spectral information on the a Fraunhofer IISB 2.6 mm 2 SiC UV photodiode 26 – 28 responsivity R ( λ ), b the UV LED irradiance P o p t ( λ ) of four discrete diodes with 5 mW radiant flux each and c the result of that gives the corresponding photocurrent generation. …”

Section: Methodsmentioning

confidence: 99%

“…The latter has full capability for designs with complementary devices, while the BJT technology is NPN only with pull-up resistors. Fraunhofer IISB already demonstrated UV photodetectors 26 – 28 , that allow integration with the CMOS fabrication technology. However, at present the only previously reported optoelectronic system in SiC, was achieved in the BJT technology at the KTH in Sweden by Hou et al 15 .…”

Section: Introductionmentioning

confidence: 99%

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Integrated 64 pixel UV image sensor and readout in a silicon carbide CMOS technology

et al. 2022

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This work demonstrates the first on-chip UV optoelectronic integration in 4H-SiC CMOS, which includes an image sensor with 64 active pixels and a total of 1263 transistors on a 100 mm2 chip. The reported image sensor offers serial digital, analog, and 2-bit ADC outputs and operates at 0.39 Hz with a maximum power consumption of 60 μW, which are significant improvements over previous reports. UV optoelectronics have applications in flame detection, satellites, astronomy, UV photography, and healthcare. The complexity of this optoelectronic system paves the way for new applications such harsh environment microcontrollers.

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Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Integrated 64 pixel UV image sensor and readout in a silicon carbide CMOS technology

et al. 2022

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“…This state-of-the-art 4H-SiC CMOS [41], [42] was developed by the Fraunhofer Institute for Integrated Systems and Devices Technology (IISB), based in Erlangen, Germany. The group of Mantooth at the University of Arkansas reported high-temperature memory SRAM cells [43] in this technology and Fraunhofer IISB demonstrated compatible UV photodetectors [44], [45] and temperature sensors [46]. This work reports on the state-of-the-art open 6 μm SiC CMOS technology, developed at Fraunhofer IISB, by providing an overview of the technology and results of implemented devices and circuits on a multiproject wafer design (Fig.…”

Section: Integrated Digital and Analog Circuit Blocks In Amentioning

confidence: 99%

Integrated Digital and Analog Circuit Blocks in a Scalable Silicon Carbide CMOS Technology

Romijn

Vollebregt

Middelburg

et al. 2022

IEEE Trans. Electron Devices

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The wide bandgap of silicon carbide (SiC) has attracted a large interest over the past years in many research fields, such as power electronics, high operation temperature circuits, harsh environmental sensing, and more. To facilitate research on complex integrated SiC circuits, ensure reproducibility, and cut down cost, the availability of a low-voltage SiC technology for integrated circuits is of paramount importance. Here, we report on a scalable and open state-of-the-art SiC CMOS technology that addresses this need. An overview of technology parameters, including MOSFET threshold voltage, subthreshold slope, slope factor, and process transconductance, is reported. Conventional integrated digital and analog circuits, ranging from inverters to a 2-bit analog-to-digital converter, are reported. First yield predictions for both analog and digital circuits show great potential for increasing the amount of integrated devices in future applications.

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“…The advantages of the SiC MSM structure and Schottky barrier photodetector include the simplicity of manufacture [13,14]. However, the photon absorptivity is rather poor due to the semi-transparent electrode's substantial light absorption effect, and the photoconductance gain will have a significant impact on the device's responses time [15,16]. On the contrary, compared with Schottky PDs, fabrication of p-n PDs and p-i-n PDs is relatively more complex, as both n type and p type doping are required in their device structure.…”

Section: Introductionmentioning

confidence: 99%

Study on SiC UV/EUV Coaxial Photodetector

Liang

Liu

et al. 2023

J. Phys.: Conf. Ser.

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In this paper, a novel 4H-SiC coaxial p-i-n ultraviolet photodetector with intense photon absorption and high quantum efficiency is studied. The spectral response and electric field distribution of the detector are calculated by TCAD software. The results showed that the innovative 4H-SiC ultraviolet coaxial p-i-n photodetector has a spectral response peak of 0.1998 A/W at 260 nm illumination wavelength and has more than twice response higher than the traditional 4H-SiC p-i-n photodetector, when the illumination wavelength is under 270 nm. The quantum efficiency of the coaxial photodetector reaches 95.3%. Moreover, in the wavelength range of EUV, the 4H-SiC ultraviolet coaxial photodetector shows a relatively high response, while the response is barely observed for the traditional 4H-SiC p-i-n photodetector. For the large area coaxial p-i-n photodetector, the problem of laterally undepleted i layer can be solved by multiple P+-type implanation. The new structure significantly enhances the rate of incident light absorption, prevents the light absorption of the conventional metal electrode and P+ layer, and provides an innovative approach for the construction of ultraviolet photodetectors in the future.

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A 4H-SiC UV Phototransistor With Excellent Optical Gain Based on Controlled Potential Barrier

Cited by 19 publications

References 31 publications

Integrated 64 pixel UV image sensor and readout in a silicon carbide CMOS technology

Integrated 64 pixel UV image sensor and readout in a silicon carbide CMOS technology

Integrated Digital and Analog Circuit Blocks in a Scalable Silicon Carbide CMOS Technology

Study on SiC UV/EUV Coaxial Photodetector

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