Implementation of digital echocardiography, certified sonographers, and a miniaturized echo system allowed improvement of the cost-effectiveness of the service provided by the echo-lab for inpatients, and avoided patients' discomfort derived from prolonged waiting time before and after the exam.

Monocrystalline SiGe/Si multiquantum dot and well structures have been manufactured/compared as thermistor materials for infrared detection. The performance of the devices (both the thermal and electrical) has been very sensitive to the quality of the epitaxial layers which is evaluated by the interfacial roughness and strain amount. This study demonstrates that the devices containing quantum dots have higher thermal coefficient resistance 3.4%/K with a noise constant (K1/f) value of 2× 10-9

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A new analytical model of 4H-SiC DMOSFETs that is useful to explore their thermal stability is presented. The model is capable to describe, with closed form equations, the DC forward behavior of devices in a wide temperature range, including the effects of parasitic resistances and oxide interface traps. The model allows to analyze the on-set of electro-thermal stability of 4H-SiC DMOSFETs both in triode and in saturation region, and to monitor the impact of the series resistance and traps on reliable operation of devices. The accuracy of the model has been verified by comparisons with numerical simulations that evidence the effect of trap densities in the range [0-1014] cm-2eV-1 for operating temperatures up to 500K. Comparisons with experimental data of 1.2kV and 1.7kV commercial devices are used to validate the model

This work presents the pattern dependency of the selective epitaxial growth of boron- and carbon-doped SiGe layers in recessed and unprocessed openings. The layer profile is dependent on deposition time, chip layout, and growth parameters. Carbon and boron doping compensates for the strain in SiGe layers, and when both dopants are introduced, the strain reduction is additive. The incorporation of boron and carbon in the SiGe matrix is a competitive action. The concentration of carbon decreases, whereas the boron amount increases in SiGe layers with higher Ge content. In recessed openings, the Ge content is independent of the recess depth. The strain amount in the grown layers is graded vertically, which is due to the thickness of the epilayer exceeding the critical thickness