2006 IEEE International Solid State Circuits Conference - Digest of Technical Papers 2006
DOI: 10.1109/isscc.2006.1696322
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A 5.6GHz 64kB Dual-Read Data Cache for the POWER6TM Processor

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Cited by 16 publications
(8 citation statements)
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“…The throughput and density of the four methods of implementing RAM storage are compared in Table IV to five high-performance custom SRAMs in 65-nm processes. In this section, we focus on RAMs with one read-write port (which we will refer to as 1rw), as it is a commonly used configuration in larger caches in processors, but some custom CMOS SRAMs have unusual port configurations, such as being able to do two reads or one write [20]. The size column lists the size of the SRAM block.…”
Section: B Sram Blocks (Low Port Count)mentioning
confidence: 99%
“…The throughput and density of the four methods of implementing RAM storage are compared in Table IV to five high-performance custom SRAMs in 65-nm processes. In this section, we focus on RAMs with one read-write port (which we will refer to as 1rw), as it is a commonly used configuration in larger caches in processors, but some custom CMOS SRAMs have unusual port configurations, such as being able to do two reads or one write [20]. The size column lists the size of the SRAM block.…”
Section: B Sram Blocks (Low Port Count)mentioning
confidence: 99%
“…This translates to leaky and power hungry designs. Dual supply techniques are one way to overcome large leakage, counter process variation and improve cell stability [9]. State-of-the-art memory designs use dual power supplies: a logic power supply, V DD-LOGIC , and a slightly higher SRAM power supply, V CS-SRAM .…”
Section: Vmin and Dual Supply Srammentioning
confidence: 99%
“…Other variations use differential NMOS or PMOS domino single-ended sense (see Fig. 2(b)) [4,5]. For two port 6-T SRAM cells, large BL swing sensing by gates is the only option.…”
Section: Sram Sensingmentioning
confidence: 99%