Abstract. The design of ultra low power (< 300 mW), high-speed analogue to digital converter (ADC) is an essential element for the Square Kilometre Array (SKA). This paper describes the design and simulation of a low-power high-speed (4GS/s) analogue to digital converter (ADC) based on two designs of InP/InGaAs Single heterojunction bipolar transistor (SHBT) (5 × 5µm 2 and 1.5×5µm 2 emitter area device). The essential difference between these two devices was the process reliability (yield), and thus the overall unit cost. Both devices provided DC and RF performance characteristics ideally suited for the low-power IC design, with high current gain of 70-80. The high-frequency performances differ due to the device geometry with an ft/fmax=78GHz/38GHz for the 5 × 5µm 2 and ft/fmax=91GHz/83GHz for the 1.5 × 5µm 2 emitter area device.