A 550-PPI LCD using 1.5 µm channel width LTPS TFTs with low frame rate driving

Abstract

-A 550 PPI low-temperature polycrystalline silicon thin-film transistor liquid-crystal display has been developed. Shrinkage of the channel width of pixel thin-film transistor together with thinner insulator for the storage capacitor allows high display quality in terms of vertical cross-talk and flicker. Thirty hertz frame rate driving is implemented to offer low power while keeping high display quality.

Carbohydrate-Assisted Combustion Synthesis To Realize High-Performance Oxide Transistors

“…Flat panel displays encompass a growing number of electronic visual technologies and are far lighter, thinner, and of higher resolution than conventional designs. − Although amorphous silicon (a-Si:H) is typically used in thin-film switching transistors (TFTs) for active-matrix liquid crystal displays (AMLCDs) or active-matrix organic light-emitting diode displays (AMOLEDs), − it is limited by low field-effect mobility (∼0.5–1.0 cm 2 V –1 s –1 ) and poor current-carrying properties. − Thus, low-temperature (≤600 °C) poly-silicon (LTPS) TFTs fabricated on glass substrates, with mobility >50 cm 2 V –1 s –1 and good current-carrying properties, are attractive for next-generation display technologies. − However, LTPS TFT production is capital- and energy-intensive, and the resulting TFTs exhibit poor electrical uniformity and high off-current levels. − Significant research carried out on amorphous metal oxide semiconductors (AOSs) has demonstrated that they are promising alternatives to LTPS. − Due to their outstanding electrical properties, excellent optical transparency, and remarkable mechanical flexibility, a-MO TFTs with mobilities of ∼5–10 cm 2 V –1 s –1 , achieved by sputtering indium-gallium-zinc oxide (IGZO) films, have reached large-scale manufacture. − More recently, with the aims of lowering processing temperatures, reducing production costs, and enabling high-throughput deposition by printing on plastic substrates, solution-processed a-MO TFTs, and particularly those based on IGZO, have advanced significantly. − In pioneering studies, solution-processed IGZO TFTs were realized at 150–250 °C using deep-UV irradiation, sol–gel on a chip, spray pyrolysis, high-pressure thermal annealing, and combustion synthesis. − However, the saturation mobilities of these devices on low-capacitance SiO 2 dielectrics remain modest (∼1–3 cm 2 V –1 s –1 ), with generally inferior bias-stress stability (5–10 V threshold voltage shift) versus state-of-the art sputtered IGZO TFTs. This likely reflects high defect densities and incomplete lattice densification.…”

Line‐time optimization technology for ultra‐large and high‐resolution liquid crystal displays

“…Moreover, 8 k × 4 k LCD TVs have been demonstrated by some display companies . Several studies have reported on the technical aspects of realization of 8 k × 4 k LCD TVs in recent years . One of the most important technical issues pertaining to these LCD TVs, as reported in such studies, is the line delay that is also called a resistor–capacitor (RC) delay because of the heavy load on electrical lines.…”

“…[1][2][3][4][5][6] Several studies have reported on the technical aspects of realization of 8 k × 4 k LCD TVs in recent years. [7][8][9][10] One of the most important technical issues pertaining to these LCD TVs, as reported in such studies, is the line delay that is also called a resistor-capacitor (RC) delay because of the heavy load on electrical lines. Both resolution and screen size of LCDs have increased continually over the years to meet consumer demands.…”