A 6&amp;#x2013;18 GHz GaAs multifunctional chip for transmit/receive modules

Bentini, Andrea; Ferrari, Mauro; Longhi, Patrick E.; Marzolf, Eric; Moron, Joel; Leblanc, Rémy

doi:10.1109/eumc.2014.6986835

Cited by 11 publications

(10 citation statements)

References 17 publications

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“…In the case of a TR module, because it includes both a transmitter and a receiver, the size can be estimated as half of its area for comparison. Comparing with these criteria, Reference has the smallest size but it is the same core chip as in Reference . Therefore, the presented core chip is believed to be the state of the art size among the presented GaAs core chips.…”

Section: Measured Performancesmentioning

confidence: 99%

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Compact 4‐bit GaAs Ku‐band core chips for phased arrays

Kim

Yeom

2020

Micro & Optical Tech Letters

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In this letter, we present an Rx core chip and a Tx core chip for Ku‐band phased arrays, which are designed and fabricated using the commercial 0.25‐μm GaAs pHEMT foundry service. Each of the Rx core chip and the Tx core chip has a 4‐bit phase shifter driven by an on‐chip serial‐to‐parallel (SPC) converter. The on‐chip SPC provides the serial interface with an external controller. The Rx core chip shows a gain >10 dB, a noise figure less than 2 dB at a frequency range of 10.7 to 12.75 GHz and for all phase states of the 4‐bit Rx phase shifter. The Tx core chip shows a gain >10 dB, an output P1dB of about 13 dBm at a frequency range of 13.5 to 15.5 GHz and for all phase states of the 4‐bit Tx phase shifter. The Rx core chip and the Tx core chip have the same size of 1.75 × 1.75 mm2, which we believe the state of the art size among the presented GaAs core chips.

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Section: Measured Performancesmentioning

confidence: 99%

“…Similarly, when the reflection coefficient seeing into the 4-bit Rx phase shifter is defined Γ in , Γ in can be approximated by Γ in ffi δ D,11 s D,11 + δ C,11 s C,11 + δ B,11 s B,11 + δ A,11 s A, 11 ð5Þ…”

Section: Design Of the Rx And The Tx Core Chipsmentioning

confidence: 99%

Compact 4‐bit GaAs Ku‐band core chips for phased arrays

Kim

Yeom

2020

Micro & Optical Tech Letters

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“…core-chip in GaAs technology; its RX gain drops to 18 dB at 14 GHz, which is about 23.5 dB at 9 GHz (-1.1 dB/GHz) [10]. Jeong demonstrated a SiGe BiCMOS X-Band multifunctional chip with 5-bit of phase and amplitude control; its receiver and transmitter gain slopes are -3.33 dB/GHz and -5 dB/GHz, respectively [11].…”

Section: Introductionmentioning

confidence: 99%

Active Positive Sloped Equalizer for X-Band SiGe BiCMOS Phased Array Applications

Çalışkan

Burak

Turkmen

et al. 2019

IEEE Trans. Circuits Syst. II

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This work presents an active equalizer circuit with positive gain slope at X-Band (8-12 GHz). Compared to passive examples, the active equalizer realized better filter and impedance characteristics in frequency of interest with increased functionality for a single amplification stage. It achieved close to 10 dB of peak gain, a + 1.13 dB/GHz gain slope with 2.8 dB NF by utilizing cascode topology. The design reaches a-1.5 dBm input-referred compression point (input-P1dB) while consuming 46 mW of power. To the best of authors' knowledge, the presented work achieves the best on-chip gain, a gain slope and NF performance in the literature as an equalizer that utilizes SiGe BiCMOS technology.

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“…Attenuators are widely employed in microwave systems to implement various functions. They can be inserted in phased array architectures to obtain the desired beam shaping and tapering . Moreover, they can be employed to increment the total dynamic range of microwave receivers, by regulating the RF power entering the first amplifying stage …”

Section: Introductionmentioning

confidence: 99%

“…They can be inserted in phased array architectures to obtain the desired beam shaping and tapering. [1][2][3] Moreover, they can be employed to increment the total dynamic range of microwave receivers, by regulating the RF power entering the first amplifying stage. 4 An attenuator can be synthesized in different ways depending on the requirement it has to fulfill.…”

Section: Introductionmentioning

confidence: 99%

Improved microwave attenuator topology minimizing the number of control voltages

Longhi

Colangeli

Ciccognani

et al. 2018

Micro & Optical Tech Letters

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This letter presents an improved circuit topology to minimize the number of external control voltages that are required to set the state of an N‐bit microwave digital attenuator. An alternative method to connect the control signal is proposed. Typically, the control signal is connected to the gate terminal of the field effect transistor while the source terminal is DC grounded. Here, the control signal is applied to the source terminal of the field effect transistor while the gate is connected to a fixed reference voltage. In this way, only one control voltage is necessary to set the state of single attenuator cell vs two control voltages required in the typical case. The proposed method becomes particularly beneficial as the number of bits increases (ie, >4). The topology has been validated through design, realization, and testing of a 5‐bit Monolithic Microwave Integrated Circuit (MMIC) attenuator operating over the full C‐band (4‐8 GHz).

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A 6–18 GHz GaAs multifunctional chip for transmit/receive modules

Cited by 11 publications

References 17 publications

Compact 4‐bit GaAs Ku‐band core chips for phased arrays

Compact 4‐bit GaAs Ku‐band core chips for phased arrays

Active Positive Sloped Equalizer for X-Band SiGe BiCMOS Phased Array Applications

Improved microwave attenuator topology minimizing the number of control voltages

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