A 72% PAE, 95-W, single-chip GaN FET S-band inverse class-F power amplifier with a harmonic resonant circuit

Motoi, Keiichi; Matsunaga, K.; Yamanouchi, S.; Kunihiro, Kazuaki; Fukaishi, M.

doi:10.1109/mwsym.2012.6258355

Cited by 26 publications

(5 citation statements)

References 8 publications

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“…This difference might be due to a larger loss in the output circuit than in the simulation and to insufficient accuracy of the simulation model. However, the achieved efficiency is the highest for an amplifier using an external matching FET, to the best of our knowledge, with the exceptions of [7,8], which used internal matching or on-chip matching. Fig .…”

Section: Design Of Power Amplifiermentioning

confidence: 95%

“…However, the effects of parasitic elements in GaN-HEMT cause the optimum load impedances to deviate from the ideal impedances [6], thereby deteriorating the efficiency. This could be restored by optimizing the reflection phase of the harmonics, and past research has reported the use of field effect transistors (FETs) with internal or on-chip matching circuits [7,8]. However, a high efficiency power amplifier using a packaged external matching transistor has not yet been reported.…”

Section: Introductionmentioning

confidence: 99%

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A 2.4 GHz-Band 100 W GaN-HEMT High-Efficiency Power Amplifier for Microwave Heating

Nakatani¹,

Ishizaki²

2015

Journal of electromagnetic engineering and science

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The magnetron, a vacuum tube, is currently the usual high-power microwave power source used for microwave heating. However, the oscillating frequency and output power are unstable and noisy due to the low quality of the high-voltage power supply and low Q of the oscillation circuit. A heating system with enhanced reliability and the capability for control of chemical reactions is desired, because microwave absorption efficiency differs greatly depending on the object being heated. Recent studies on microwave high-efficiency power amplifiers have used harmonic processing techniques, such as class-F and inverse class-F. The present study describes a high-efficiency 100 W GaN-HEMT amplifier that uses a harmonic processing technique that shapes the current and voltage waveforms to improve efficiency. The fabricated GaN power amplifier obtained an output power of 50.4 dBm, a drain efficiency of 72.9%, and a power added efficiency (PAE) of 64.0% at 2.45 GHz for continuous wave operation. A prototype microwave heating system was also developed using this GaN power amplifier. Microwaves totaling 400 W are fed from patch antennas mounted on the top and bottom of the microwave chamber. Preliminary heating experiments with this system have just been initiated. This is an Open-Access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/ by-nc/3.0) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited. ⓒ

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Section: Design Of Power Amplifiermentioning

confidence: 95%

Section: Introductionmentioning

confidence: 99%

A 2.4 GHz-Band 100 W GaN-HEMT High-Efficiency Power Amplifier for Microwave Heating

Nakatani¹,

Ishizaki²

2015

Journal of electromagnetic engineering and science

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“…amplifier for ISM applications AlGaN/GaN HFETs yield excellent performance for applications which require high efficiency in L-and Sband. [13][14][15][16][17] Here switch-mode amplifier concepts using optimized harmonic terminations can be applied to enhance efficiency. We demonstrate the achievable results for the ISM frequency band of 2.4 GHz.…”

Section: High Efficiency Class-e Switch-mode Powermentioning

confidence: 99%

(In)AlGaN Heterojunction Field Effect Transistors and Circuits for High-Power Applications at Microwave and Millimeter-Wave Frequencies

Maroldt¹,

Quay²,

Dennler³

et al. 2013

Jpn. J. Appl. Phys.

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The suitability of the AlGaN/GaN heterostructure for applications up to 20 GHz is demonstrated based on a technically mature process. A broadband power amplifier integrated circuit is designed and fabricated in order to monitor the technology performance. Further, a 100 W power transistor for mobile communications is realized with an efficiency of 70% and an operation frequency of up to 3 GHz. We also demonstrate the performance of a 60 W switch-mode power amplifier module with 75% efficiency for industrial, scientific and medical applications at 2.4 GHz. To push the technology towards higher millimeter-wave frequencies an InAlGaN-based heterostructure was developed. This structure yields high sheet carrier concentration and mobility of 1.9×1013 cm-2 and 1590 cm2 V-1 s-1, respectively. An excellent f T of 110 GHz and f max of 190 GHz were achieved with HFETs with a gate length of 100 nm. This allowed the realization of InAlGaN-based power amplifier monolithic microwave integrated circuits (MMICs) operating at millimeter-wave frequencies of 60 and 94 GHz.

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“…Comparison with state-of-the-art power amplifiers considering PAE higher than 45%, output powers higher than 10 W, relative bandwidths higher than 10%, and a center frequency between 2.5 and 4.0 GHz [12][13][14][15][16][17][18][19].…”

Section: A C K N O W L E D G E M E N T Smentioning

confidence: 99%

Wideband harmonically matched packaged GaN HEMTs with high PAE performances at S-band frequencies

Chéron

Campovecchio

Barataud

et al. 2013

Int. J. Microw. Wireless Technol.

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International audienceThis paper presents a design method of internally-matched packaged GaN high electron mobility transistors (HEMTs) for achieving not only high-efficiency and high-power performances but also a wide bandwidth and insensitivity to harmonic terminations in the S-band. The package and its internal matching networks are synthesized to confine the second harmonic impedances seen by the GaN die to high-efficiency regions whatever the harmonic impedances presented outside the package. This paper reports the design of a packaged GaN HEMT achieving 78% of power-added-efficiency (PAE) and 25 W of output power at 2.5 GHz. A packaged GaN power bar is also reported with the addition of fundamental matching networks inside the package. In 50V environment, the packaged GaN power bar provided more than 56% of PAE from 2.5 to 3.1 GHz and was desensitized to harmonic load variations with less than two points of PAE variation when a load-pull is performed at second harmonic frequencies outside the package

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A 72% PAE, 95-W, single-chip GaN FET S-band inverse class-F power amplifier with a harmonic resonant circuit

Cited by 26 publications

References 8 publications

A 2.4 GHz-Band 100 W GaN-HEMT High-Efficiency Power Amplifier for Microwave Heating

A 2.4 GHz-Band 100 W GaN-HEMT High-Efficiency Power Amplifier for Microwave Heating

(In)AlGaN Heterojunction Field Effect Transistors and Circuits for High-Power Applications at Microwave and Millimeter-Wave Frequencies

Wideband harmonically matched packaged GaN HEMTs with high PAE performances at S-band frequencies

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