A 720 mV open circuit voltage SiOx:c-Si:SiOx double heterostructure solar cell

Yablonovitch, Eli; Gmitter, T. J.; Swanson, R.M.; Kwark, Young

doi:10.1063/1.96331

Cited by 198 publications

(102 citation statements)

References 9 publications

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“…Even if current surface recombination velocities may be closer to infinity than to zero, it is certainly possible to decrease surface recombination currents by using band offsets for the respective minorities at the contacts. This concept has been known for a long time in photovoltaics 33 and has been applied in both inorganic 34,35 and organic devices. 36 …”

Section: B Infinite Surface Recombinationmentioning

confidence: 99%

Mobility dependent efficiencies of organic bulk heterojunction solar cells: Surface recombination and charge transfer state distribution

et al. 2009

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Recent simulations of the efficiency of polymer/fullerene solar cells as a function of mobility predicted finite optimum mobilities due to a decrease in open circuit voltage for higher mobilities. We explain this decrease in open circuit voltage with two features of the commonly used model, namely, infinite surface recombination and an integration over a distribution of separation distances of electron and hole in a charge transfer state at the interface between donor and acceptor molecules. Especially, the assumption of a variable electron/hole pair separation at the interface has a considerable influence on the open circuit voltage.

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Section: B Infinite Surface Recombinationmentioning

confidence: 99%

Mobility dependent efficiencies of organic bulk heterojunction solar cells: Surface recombination and charge transfer state distribution

et al. 2009

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“…Key to the success of SHJ devices is the separation of highly recombination-active (ohmic) contacts from the crystalline surface by insertion of a passivating, semiconducting film with a wider bandgap [24]. For SHJ devices, ideally, charge trickles through this buffer layer sufficiently slowly to build up a high voltage, but fast enough to avoid carriers recombining before being collected.…”

Section: The Heterojunction Conceptmentioning

confidence: 99%

“…To accomplish this, an essential condition is the absence of defects leading to interface recombination [24]. Next, to act as a semi-permeable carrier membrane, the band offsets and the (low) carrier mobility of the buffer layers are of fundamental importance [168].…”

Section: Basic Considerationsmentioning

confidence: 99%

High-efficiency Silicon Heterojunction Solar Cells: A Review

Wolf

Descoeudres

Holman

et al. 2012

Green

763

352

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Abstract. Silicon heterojunction solar cells consist of thin amorphous silicon layers deposited on crystalline silicon wafers. This design enables energy conversion efficiencies above 20% at the industrial production level. The key feature of this technology is that the metal contacts, which are highly recombination active in traditional, diffused-junction cells, are electronically separated from the absorber by insertion of a wider bandgap layer. This enables the record open-circuit voltages typically associated with heterojunction devices without the need for expensive patterning techniques. This article reviews the salient points of this technology. First, we briefly elucidate device characteristics. This is followed by a discussion of each processing step, device operation, and device stability and industrial upscaling, including the fabrication of solar cells with energyconversion efficiencies over 21%. Finally, future trends are pointed out.

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“…Initially it was discovered that abrupt electronic heterojunctions can be created with such structure [1], followed by an application to solar cells [2]. Structures featuring a wider bandgap emitter have in the past already been suggested to allow for maximal photovoltaic device performance [3]. For a-Si:H / c-Si heterostructures, it was found that the output parameters benefit substantially from inserting a few nm thin intrinsic a-Si:H(i) film between the doped amorphous emitter and c-Si substrate.…”

Section: Introductionmentioning

confidence: 99%

Understanding of Passivation Mechanism in Heterojunction c-Si Solar Cells

Kondo¹,

Wolf

Fujiwara³

2008

MRS Proc.

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Intrinsic hydrogenated amorphous silicon (a-Si:H) films can yield in outstanding electronic surface passivation of crystalline silicon (c-Si) wafers as utilized in the HIT (heterojunction with intrinsic thin layer) solar cells. We have studied the correlation between the passivation quality and the interface nature between thin amorphous layers and an underlying c-Si substrate for understanding the passivation mechanism. We found that a thin (~5nm) intrinsic layer is inhomogeneous along the growth direction with the presence of a hydrogen rich layer at the interface and that completely amorphous films result in better passivation quality and device performance than an epitaxial layer. Post annealing improves carrier lifetime for the amorphous layer, whereas the annealing is detrimental for the epitaxial layer. We have also found that the passivation quality of intrinsic a-Si:H(i) film deteriorates severely by the presence of a boron-doped a-Si:H(p + ) overlayer due to Si-H rupture in the aSi:H(i) film. Finally, for a passivation layer in the hetero-junction structure, a-Si 1-x O x will be demonstrated in comparison with a-Si:H.

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A 720 mV open circuit voltage SiOx:c-Si:SiOx double heterostructure solar cell

Cited by 198 publications

References 9 publications

Mobility dependent efficiencies of organic bulk heterojunction solar cells: Surface recombination and charge transfer state distribution

Mobility dependent efficiencies of organic bulk heterojunction solar cells: Surface recombination and charge transfer state distribution

High-efficiency Silicon Heterojunction Solar Cells: A Review

Understanding of Passivation Mechanism in Heterojunction c-Si Solar Cells

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