A 77GHz 4-channel automotive radar transceiver in SiGe

Forstner, Hans Peter; Knapp, H.; Jäger, Herbert; Kolmhofer, Erich; Platz, J.; Starzer, Florian; Treml, M.; Schinko, Andreas; Birschkus, G.; Böck, J.; Aufinger, Klaus; Lachner, Rudolf; Meister, T.F.; Schäfer, H.; Lukashevich, D.; Boguth, S.; Fischer, Alexander; Reininger, F.; Maurer, Linus; Minichshofer, Jurgen; Steinbuch, Dirk

doi:10.1109/rfic.2008.4561425

Cited by 116 publications

(50 citation statements)

References 6 publications

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“…For example, the first silicon based technology at Infineon, which has been qualified for automotive radar applications at 77 GHz [11] according to AEC-Q100 standards, is based on the SA selective epitaxial base HBT. The technology is called B7HF200 and uses relaxed 0.35 µm lithography.…”

Section: A Single Poly Quasi Self-aligned Architecturementioning

confidence: 99%

Advanced process modules and architectures for half-terahertz SiGe:C HBTs

Decoutere

Huylenbroeck

Heinemann

et al. 2009

2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting

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The European project DOTFIVE [1] addresses evolutionary scaling of self-aligned selective epitaxial base SiGe:C HBTs, investigates novel SiGe:C HBT architectures, and develops novel process modules to push SiGe BiCMOS towards 500 GHz F max and 2.5 ps gate delay. In this paper, scaling issues of SiGe:C HBT technology will be addressed. The limitations of the different commonly used architectures will be described, and measures taken in the project to overcome these limitations will be summarized. Initial results indicate that the objectives of the project can be reached.

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Section: A Single Poly Quasi Self-aligned Architecturementioning

confidence: 99%

Advanced process modules and architectures for half-terahertz SiGe:C HBTs

Decoutere

Huylenbroeck

Heinemann

et al. 2009

2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting

Self Cite

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“…Today's applications already include high-speed communication systems at 60 GHz [51]- [54] or automotive radar systems at 77 GHz [55], [56]. Additionally, state-of-the-art CMOS technologies have shown competitive performances [57], [58], although they lack behind in available output power.…”

Section: Outlook and Conclusionmentioning

confidence: 99%

Opportunities for silicon at mmWave and Terahertz frequencies

Pfeiffer

Öjefors

Lisauskas

et al. 2008

2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting

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This paper summarizes opportunities for silicon process technologies at mmWave and Terahertz frequencies and demonstrates key building blocks for 94-GHz and 600-GHz imaging arrays. It reviews potential applications and summarizes state-of-the-art terahertz technologies. Terahertz focal-plane arrays (FPAs) for video-rate imaging applications have been fabricated in commercially available CMOS and SiGe process technologies respectively. The 3×5 arrays achieve a responsivity of up to 50 kV/W with a minimum NEP of 400 pW/ √ Hz at 600 GHz. Images of postal envelopes are presented which demonstrate the potential of silicon integrate 600-GHz terahertz FPAs for future low-cost terahertz camera systems.

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“…Integrated frequency-modulated-continuous-wave (FMCW) radar transmitters and receivers at 24 GHz and higher frequencies have been the focus of the many recent studies [1][2][3][4][5][6][7][8][9][10][11][12][13]. A fully integrated transceiver, which integrates all radio frequency (RF) and microwave components, has great advantages in terms of cost, system integrity, RF signal cross-talk, and transmission loss as well as the overall power consumption.…”

Section: Introductionmentioning

confidence: 99%

“…Traditionally, III-V processes as well as SiGe technologies are utilized for the transceiver's implementations, operating at these frequencies [1][2][3][4]. However, in recent years, CMOS technologies are becoming more favorable as the rapid downscaling of CMOS processes allows the designers to implement their circuits on these technologies with less production cost and better analog-digital integrity [5][6][7][8].…”

Section: Introductionmentioning

confidence: 99%

24 GHz low-power switch-channel CMOS transceiver for wireless localization

Zhang

Hamidian

Shu

et al. 2014

Int. J. Microw. Wireless Technol.

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A 24 GHz low-power transceiver is designed, fabricated, and characterized using 130 nm complementary metal-oxide semiconductor (CMOS) process. The designed transceiver is targeted for frequency-modulated-continuous-wave (FMCW) wireless local positioning. The transceiver includes four switchable receiving channels, one transmitting channel and local-oscillator generation circuitries. Several power-saving techniques are implemented, such as switch channel and adaptive mixer biasing. The design aspects of the low-power circuit blocks and integration considerations are presented in details. The integrated transceiver has a chip area of only 2.2 mm × 1.7 mm. In transmitting mode the transceiver achieves an output power of 4 dBm and phase noise of 290 dBc/Hz at 1 MHz, while consuming 75 mW power consumption under 1.5 V power supply. In switch-channel receiving mode the transceiver demonstrates 31 dB gain and 6 dB noise figure with 65 mW power consumption. The transceiver measurements compare well with the simulated results and achieve state-of-the-art performance with very low-power consumption.

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A 77GHz 4-channel automotive radar transceiver in SiGe

Cited by 116 publications

References 6 publications

Advanced process modules and architectures for half-terahertz SiGe:C HBTs

Advanced process modules and architectures for half-terahertz SiGe:C HBTs

Opportunities for silicon at mmWave and Terahertz frequencies

24 GHz low-power switch-channel CMOS transceiver for wireless localization

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