A BEOL Compatible, 2-Terminals, Ferroelectric Analog Non-Volatile Memory

Bégon‐Lours, Laura; Halter, Mattia; Pineda, Diana Dávila; Popoff, Youri; Bragaglia, Valeria; Porta, Antonio La; Jubin, D.; Fompeyrine, J.; Offrein, Bert Jan

doi:10.1109/edtm50988.2021.9420886

Cited by 5 publications

(5 citation statements)

References 11 publications

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“…This has furthered the development of various FE devices, such as ferroelectric tunnel junctions (FTJs) 2 or ferroelectric field effect transistors (FeFETs) 3 . In particular, the integration of such devices into circuits such as artifical neural networks 4 has become more realistic, especially with the demonstration of back-end-of-line compatibility 5,6 . Nonetheless, some aspects of standard HfO 2 device characterization and measurement cannot be directly transferred to on-chip operation.…”

mentioning

confidence: 99%

“…All domains which are switchable via an analog switching scheme with identical pulses are accessed via multi-pulse wakeup, and any other domains (i.e. those with the highest coercive fields) cannot contribute to the analog switching behaviour, unless the device is set with increasing pulse amplitudes or widths 6 , possibly necessitating additional high-voltage devices on-chip. Additionally, it shows that the polarization can be gradually switched with identical pulses even from the pristine state.…”

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confidence: 99%

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A multi-pulse wakeup scheme for on-chip operation of devices based on ferroelectric doped HfO2 thin films

Lancaster

Mikolajick

Slesazeck

2022

Applied Physics Letters

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A wakeup scheme for ferroelectric thin Hf0.5Zr0.5O2 films is presented, based on a gradual switching approach using multiple short pulses with a voltage amplitude roughly equal to the coercive voltage. This enables the on-chip wakeup and switching operation of ferroelectric devices, such as ferroelectric tunnel junctions (FTJs), with identical pulses. After wakeup using alternating pulse trains, which gradually switch the film polarization, FTJ operation is demonstrated to be as effective as after “normal” wakeup, with bipolar pulses of an amplitude larger than the coercive voltage. In this case, the voltage applied during wakeup was reduced by 26%, thereby lowering the required operating power.

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confidence: 99%

mentioning

confidence: 99%

A multi-pulse wakeup scheme for on-chip operation of devices based on ferroelectric doped HfO2 thin films

Lancaster

Mikolajick

Slesazeck

2022

Applied Physics Letters

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“…Part of this work was presented at IEEE EDTM (2021), see reference [34], as well as IEEE IMW (2021), see reference [35].…”

Section: Conference Proceedingsmentioning

confidence: 99%

Analog Resistive Switching in BEOL, Ferroelectric Synaptic Weights

Bégon‐Lours¹,

Halter

Popoff

et al. 2021

IEEE J. Electron Devices Soc.

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A Ferroelectric, two-terminals, analog memristive device is fabricated with a Back-End-Of-Line, CMOS compatible process. A bilayer composed of a ferroelectric material, HfZrO4 (HZO) and a semiconducting oxide, WOx layer is comprised between two TiN electrodes. The devices demonstrate reversible and remanent resistive switching, with a record endurance (>10 10 switching cycles) and ON/OFF ratio up to 10. The analog resistive switching is obtained, with a cycle-to-cycle reproducibility of 90%. The synaptic behavior is explored with pulses of varying sign, length, or amplitude. For the scheme with constant pulse width the linearity coefficients for the potentiation and depression are -1.4 and 4. The dynamics of the resistive switching is shown to be governed by the ferroelectric domains switching. Finally, temperature dependent transport measurements indicate Ohmic conduction at low bias and Modified Schottky Emission at larger bias. They provide insights on the role of defects and oxygen vacancies in the transport and resistive switching mechanisms.

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“…[12,53] Figure 4a depicts the synaptic functions of LTP and LTD emulated in the Pt/SiO 2 /HZO/TiN/Si FTJ by 10 ns voltage pulses <1.2 V. Here, pulses from −0.4 to −0.56 V were applied for LTP, and pulses from 0.68 to 1.13 V were utilized for LTD (Figure S17, Supporting Information). The operation speed (10 ns) is faster than that of a biological synapse (≈0.3 ms) [54,55] and reported HfO 2 -based electrical synapses, [27,56] which is significant for developing high-speed neuromorphic computing systems. A total of 128 (7 bits) synaptic states were achieved with good linearity (nonlinearity of 0.96) and a low cycle-to-cycle variation of 3%, which is important for the online training of memristor-based neural networks.…”

Section: Ftj-based Analog Memristor and Neural Network Simulationmentioning

confidence: 99%

Silicon‐Compatible Ferroelectric Tunnel Junctions with a SiO₂/Hf_0.5Zr_0.5O₂Composite Barrier as Low‐Voltage and Ultra‐High‐Speed Memristors

Wang,

Guan,

et al. 2024

Advanced Materials

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The big data era requires ultrafast, low‐power and silicon‐compatible materials and devices for information storage and processing. Ferroelectric tunnel junctions (FTJs) have emerged as low‐power and fast memristors; but their operating voltages are high for fast switching speeds, and performances of silicon‐compatible FTJs are significantly poorer than those of perovskite FTJs. Here, FTJs based on SiO2/Hf0.5Zr0.5O2 composite barrier and both conducting electrodes are designed and fabricated on Si substrates. The FTJ achieves the fastest write speed of 500 ps under 5 V (∼2 orders of magnitude faster than reported silicon‐compatible FTJs) or 10 ns speed at a low voltage of 1.5 V (the lowest voltage among FTJs at similar speeds), low write current density ∼1.3 × 104 A cm−2, 8 discrete states, good retention > 105s at 85 °C and endurance > 107. In addition, it provides a large read current (∼88 A cm−2) at 0.1 V, ∼2 orders of magnitude larger than reported FTJs. Interestingly, in FTJ‐based synapses, gradually tunable conductance states (128 states) with high linearity (<1) are obtained by 10 ns pulses of <1.2 V, and a high accuracy of ∼91.8% in recognizing fashion product images is achieved by online neural network simulations. These results highlight that silicon‐compatible HfO2‐based FTJs are promising for high‐performance nonvolatile memories and electrical synapses.This article is protected by copyright. All rights reserved

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A BEOL Compatible, 2-Terminals, Ferroelectric Analog Non-Volatile Memory

Cited by 5 publications

References 11 publications

A multi-pulse wakeup scheme for on-chip operation of devices based on ferroelectric doped HfO2 thin films

A multi-pulse wakeup scheme for on-chip operation of devices based on ferroelectric doped HfO2 thin films

Analog Resistive Switching in BEOL, Ferroelectric Synaptic Weights

Silicon‐Compatible Ferroelectric Tunnel Junctions with a SiO₂/Hf_0.5Zr_0.5O₂Composite Barrier as Low‐Voltage and Ultra‐High‐Speed Memristors

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A BEOL Compatible, 2-Terminals, Ferroelectric Analog Non-Volatile Memory

Cited by 5 publications

References 11 publications

A multi-pulse wakeup scheme for on-chip operation of devices based on ferroelectric doped HfO2 thin films

A multi-pulse wakeup scheme for on-chip operation of devices based on ferroelectric doped HfO2 thin films

Analog Resistive Switching in BEOL, Ferroelectric Synaptic Weights

Silicon‐Compatible Ferroelectric Tunnel Junctions with a SiO2/Hf0.5Zr0.5O2Composite Barrier as Low‐Voltage and Ultra‐High‐Speed Memristors

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Product

Resources

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Silicon‐Compatible Ferroelectric Tunnel Junctions with a SiO₂/Hf_0.5Zr_0.5O₂Composite Barrier as Low‐Voltage and Ultra‐High‐Speed Memristors