2001
DOI: 10.1021/ma002071o
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A Bergman Cyclization Approach to Polymers for Thin-Film Lithography

Abstract: A new polymer, poly(3,4-bis(phenylethynyl)styrene), has been synthesized that undergoes a Bergman reaction upon heating to yield a highly aromatic material. The occurrence of the cycloaromatization reaction is characterized through thermal analysis and absorption spectroscopy. The plasma etch resistance of the polymer has been measured by reactive ion etching (RIE) in sulfur hexafluoride and oxygen plasmas and is shown to be superior to other conventional organic plasma etch barriers.

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Cited by 50 publications
(31 citation statements)
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“…The cured BODA network polymers can serve as excellent precursors for glassy carbonous materials. Tolbert and coworkers78 synthesized crosslinked poly(3,4‐bis(phenylethynyl) styrene) utilizing Bergman cyclization, the highly aromatic polymers showed potential applications in lithographic materials. In addition, some novel polymers with special architectures have been reported recently through Bergman cyclization 79–83.…”
Section: Introductionmentioning
confidence: 99%
“…The cured BODA network polymers can serve as excellent precursors for glassy carbonous materials. Tolbert and coworkers78 synthesized crosslinked poly(3,4‐bis(phenylethynyl) styrene) utilizing Bergman cyclization, the highly aromatic polymers showed potential applications in lithographic materials. In addition, some novel polymers with special architectures have been reported recently through Bergman cyclization 79–83.…”
Section: Introductionmentioning
confidence: 99%
“…Since the polymer is grown directly on the surface to be patterned, it is also possible to use polymers that could not be coated easily in solution using normal spin casting methods. 14 Furthermore, EUV, electron beam, x-ray, and various scanning probe methods offer the possibility of small-scale ͑Ͻ50 nm͒, high-resolution lithography. These approaches can overcome the feature size limitation induced by the wavelength of UV light, which is one of the most significant drawbacks of conventional optical lithography.…”
Section: Discussionmentioning
confidence: 99%
“…Synthetic route to the formation of 3,4-bis(phenylethynyl) styrene (A) followed by polymerization. [10] www.MaterialsViews.com…”
Section: Mechanism For Homopolymerizationmentioning
confidence: 99%
“…However, in a recent work, a new polymer with highly aromatic groups attached to the main chain was designed based on Bergman cyclization and proved to be a more effective etch mask than the widely used silicon substrate (Scheme 5). [10] Monomer 3,4-bis(phenylethynyl) styrene was initiated by AIBN and polymerized at 50 8C to yield a polyethylene backbone. In order to maintain a good solubility, a relatively large amount of initiator (5 mol%) was added.…”
Section: Introductionmentioning
confidence: 99%