A BiCMOS Technology Featuring a 300/330 GHz (fT/fmax) SiGe HBT for Millimeter Wave Applications

Orner, B.; Dahlstrom, M.; Pothiawala, A.; Rassel, R.; Liu, Q.; Ding, Hanyi; Khater, Marwan; Ahlgren, D.; Joseph, A.J.; Dunn, J.

doi:10.1109/bipol.2006.311157

Cited by 22 publications

(10 citation statements)

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“…A proof-of-concept bias and control circuit has been implemented using a commercial silicon germanium (SiGe) BiCMOS integrated circuit process [23]. A block diagram of the chip connected to an SNSPD appears in Fig.…”

Section: Resultsmentioning

confidence: 99%

Active quenching of superconducting nanowire single photon detectors

Ravindran¹,

Cheng²,

Tang³

et al. 2020

Opt. Express

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Superconducting nanowire single photon detectors are typically biased using a constant current source and shunted in a conductance which is over an order of magnitude larger than the peak normal domain conductance of the detector. While this design choice is required to ensure quenching of the normal domain, the use of a small load resistor limits the pulse amplitude, rising-edge slew rate, and recovery time of the detector. Here, we explore the possibility of actively quenching the normal domain, thereby removing the need to shunt the detector in a small resistance. We first consider the theoretical performance of an actively quenched superconducting nanowire single photon detector and, in comparison to a passively quenched device, we predict roughly an order of magnitude improvement in the slew rate and peak voltage achieved in this configuration. The experimental performance of actively and passively quenched superconducting nanowire single photon detectors are then compared. It is shown that, in comparison to a passively quenched device, the actively quenched detectors simultaneously exhibited improved count rates, dark count rates, and timing jitter.

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Section: Resultsmentioning

confidence: 99%

Active quenching of superconducting nanowire single photon detectors

Ravindran¹,

Cheng²,

Tang³

et al. 2020

Opt. Express

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“…carrier) frequencies with typically about 1/3 of peak f max in practical applications. Today's 3 rd -generation SiGe hetero-junction bipolar transistors (HBTs) achieve cut-off frequencies as high as f max /f T = 350/300 GHz [18]- [20], while the semiconductor industry currently pushes research and development for the next generation with a maximum operating frequency target penetrating the terahertz frequency range (0.5 THz at room temperature) [11]. The device performance improvements have been accomplished through steady progress in vertical and lateral scaling for parasitic resistance and capacitance reduction [40].…”

Section: Silicon Design Considerations and Technology Roadmapmentioning

confidence: 99%

“…Today's state-of-the-art SiGe HBTs for instance achieve a f max /f T of 350/300 GHz [18]- [20] at room temperature and SiGe HBTs with 0.5 THz f max are currently under development [11]. Emerging markets may benefit from advanced SiGe HBT transistors in two ways: (1) their superior highfrequency performance in conjunction with CMOS integration capabilities makes them an enabling technology for applications that historically have exhibited low integration levels and yield, (2) it uses economies of scale to provide a cost-effective platform for highly integrated subsystems and single-chip solutions at mmWave frequencies and beyond.…”

Section: Introductionmentioning

confidence: 99%

Opportunities for silicon at mmWave and Terahertz frequencies

Pfeiffer

Öjefors

Lisauskas

et al. 2008

2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting

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This paper summarizes opportunities for silicon process technologies at mmWave and Terahertz frequencies and demonstrates key building blocks for 94-GHz and 600-GHz imaging arrays. It reviews potential applications and summarizes state-of-the-art terahertz technologies. Terahertz focal-plane arrays (FPAs) for video-rate imaging applications have been fabricated in commercially available CMOS and SiGe process technologies respectively. The 3×5 arrays achieve a responsivity of up to 50 kV/W with a minimum NEP of 400 pW/ √ Hz at 600 GHz. Images of postal envelopes are presented which demonstrate the potential of silicon integrate 600-GHz terahertz FPAs for future low-cost terahertz camera systems.

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“…Recent works have allowed SiGe Heterojunction Bipolar Transistors (HBTs) to reach cut-off frequencies f T and f max higher than 200 GHz [1,2]. To further increase high-frequency performances, high doping concentrations and abrupt vertical doping profiles are needed throughout the device, and in particular at the base/collector junction.…”

Section: Introductionmentioning

confidence: 99%