A Boolean OR gate implemented with an optoelectronic switching memristor

Abstract

Nonvolatile stateful logic computing in memristors has tremendous potential to realize the aggregation combined with information storage and processing in the same physical location for breaking the von Neumann bottleneck of traditional computing architecture. Here, we fabricate a monoclinic BiVO4 film with a bandgap of Eg ≈ 2.4 eV and a nanoporous morphology as the memristor storage medium. The device, consisting of a TiN/BiVO4/fluorine-doped tin oxide structure, demonstrated excellent electric- and light-control of resistive switching performance. A Boolean “OR” gate is shown to be operable with an electrical signal and light signal as inputs and the resistance as output. According to the I–V fitting results, the conduction mechanism of the memristor is inferred to be trapped-assisted tunneling model. The large photocurrent is due to trapped electrons in the defects which will be released to the conduction band. The nanoporous structure and suitable bandgap are also beneficial to light absorption and electron detrapping for enlarging photocurrent. This work lays the device foundation for electrical–optical controlling logic functions in memristor devices.

Electrically and Optically Controllable p–n Junction Memtransistor Based on an Al2O3 Encapsulated 2D Te/ReS2 van der Waals Heterostructure

“…[ 16 − 19 ] Despite their excellent performances, two‐terminal optoelectronic memristors can respond to only one input signal from voltage bias, which restricts their applications for multilevel resistive switching memories and complex learning networks. [ 20 ]…”

“…[16−19] Despite their excellent performances, two-terminal optoelectronic memristors can respond to only one input signal from voltage bias, which restricts their applications for multilevel resistive switching memories and complex learning networks. [20] Tremendous efforts have been made to achieve both memristive switching of the memristor and gate tunability of fieldeffect transistors, the so-called memtransistor, to provide an additional degree of freedom to control bistable resistance states. [21−24] Most popular technical approaches are associated with the manipulation of defects and grain boundaries in resistive switching materials.…”

Programmable Photoelectric Memristor Gates for In Situ Image Compression

“…Performing this operation mandated a somewhat complex multistep process involving negative voltages. A Boolean OR gate implemented with an optoelectronic switching memristor was also shown by Zhao et al [ 26 ] This emerging research field presents an opportunity for the development of intelligent, bioinspired visual perception apparatuses. Such systems could replace both bionic prostheses [ 27 − 29 ] and robotic eyes, [ 30 ] combining image sensors with artificial intelligent image processing [ 31 , 32 ] into a single platform.…”

Bi2O2Se-based integrated multifunctional optoelectronics

“…15 Among recent reports, Yuqian Chen et al demonstrated a heterostructure of PtS 2 /h-BN/graphene as multibit optoelectronic memory, which performed up to 74 differentiable states (>6 bits) via controlled linear conductance using light pulses. 24 In concern with multifunction, specic operations are also performed within the memory devices such as arithmetical operation, 1,25 logic operation (function of digital logic gates: "AND", "OR", "NAND", "NOR"), 2,16,[26][27][28] and Pavlovian associative learning process. [29][30][31] Moreover, photomemrister 28,32,33 and photonic synapse 34 were also studied and reported.…”