A brief review of dual-frequency capacitively coupled discharges

Bi, Zhenhua; Liu, Yongxin; Jiang, Wei; Xu, Xiaohui

doi:10.1016/j.cap.2011.07.002

Cited by 42 publications

(24 citation statements)

References 126 publications

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“…microelectronics, semiconductors, material engineering, etc., where low-pressure discharge plasmas have been utilized for a long time with practical levels of industry. For example, in the microelectronics engineering, dry etching processes have been widely applied for more than 30 years for the commercial fabrication of memories [7], where typically, fluorine radicals are generated from fluorocarbon gases in the argon-based low-temperature plasmas like CCP [8,9], ICP [10,11], ECR plasmas [12,13], or others, and applied to material etching out of the substrate. On the other hand, for thin-film deposition processes like photovoltaic-device manufacturing, silicon-based materials are quite often deposited on substrates from the SiH 4 or other siliconcompound gaseous molecules [14,15].…”

Section: Introductionmentioning

confidence: 99%

Optical Emission Spectroscopic (OES) analysis for diagnostics of electron density and temperature in non-equilibrium argon plasma based on collisional-radiative model

Akatsuka

2019

Advances in Physics: X

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This paper describes the use of Optical Emission Spectroscopy (OES) to measure electron densities and temperatures in nonequilibrium plasmas. The ways to interpret relative lineintensities of neutral argon atoms are evaluated based upon a collisional-radiative model including atomic collisional processes. A conversion from an excitation temperature determined from relative line intensities assuming a Boltzmann population distribution to the thermal electron temperature in the electron temperature range 1-4 eV and electron density range 10 10-10 12 cm-3 is given. Procedures to obtain electron temperature T e and density N e of non-equilibrium argon plasma by OES measurement with collisional radiative model.

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Section: Introductionmentioning

confidence: 99%

Optical Emission Spectroscopic (OES) analysis for diagnostics of electron density and temperature in non-equilibrium argon plasma based on collisional-radiative model

Akatsuka

2019

Advances in Physics: X

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“…12 Typically, the dual-frequency concept is being used to allow separate control over the ion energies and the fluxes at the substrate in plasma processing at low pressures. [13][14][15][16][17][18] In contrast, in atmospheric pressure, the dual-frequency concept is being used because it exhibits superior discharge characteristics including better plume length, current density, and electron excitation temperature of the plasma. However, mixing a microwave frequency with a typical frequency such as 13.56 MHZ and its effects on the electron kinetics including the electron energy distribution function (EEDF) and energetic electrons on the electrode have not been clarified.…”

Section: Introductionmentioning

confidence: 95%

Enhanced transportation of energetic electrons in dual-frequency atmospheric microplasmas

et al. 2013

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A comparative study of electron kinetics between single-frequency (SF) microplasmas and their equivalent dual-frequency (DF) microplasmas with matching effective frequencies in atmosphericpressure helium discharges was performed using particle-in-cell simulation with a Monte Carlo collision. The effective-frequency concept helps in analyzing DF microplasmas in a fashion similar to SF microplasmas with effective parameters. In this study, the plasma characteristics such as the plasma potential, density, and electron energy probability functions of the SF microplasma and its DF counterpart were almost the same. However, the oscillating sheath edge was pushed further into the electrode for a substantial fraction of the time and the sheath width decreased in DF microplasmas. As a result, the transportation of the energetic electrons (e > 4 eV) usable for tailoring the surface chemistry in atmospheric microplasmas is enhanced in DF microplasmas as compared to SF microplasmas. V C 2013 American Institute of Physics. [http://dx.

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“…8,9 Various models and simulations have been proposed to study the 2f CCRF plasma. [10][11][12][13][14][15][16] Several experiments have been also reported. 17,18 Electron heating mechanism is the key issue in understanding the CCRF plasma discharges.…”

Section: Introductionmentioning

confidence: 95%

Dual radio frequency plasma source: Understanding via electrical asymmetry effect

Bora

Bhuyan

Favre

et al. 2013

Journal of Applied Physics

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On the basis of the global model, the influences of driving voltage and frequency on electron heating in geometrically symmetrical dual capacitively coupled radio frequency plasma have been investigated. Consistent with the experimental and simulation results, non-monotonic behavior of dc self bias and plasma heating with increasing high frequency is observed. In addition to the local maxima of plasma parameters for the integer values of the ratio between the frequencies (n), ourstudies also predict local maxima for odd integer values of 2n as a consequence of the electrical asymmetry effect produced by dual frequency voltage sources. V C 2013 AIP Publishing LLC [http://dx.

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A brief review of dual-frequency capacitively coupled discharges

Cited by 42 publications

References 126 publications

Optical Emission Spectroscopic (OES) analysis for diagnostics of electron density and temperature in non-equilibrium argon plasma based on collisional-radiative model

Optical Emission Spectroscopic (OES) analysis for diagnostics of electron density and temperature in non-equilibrium argon plasma based on collisional-radiative model

Enhanced transportation of energetic electrons in dual-frequency atmospheric microplasmas

Dual radio frequency plasma source: Understanding via electrical asymmetry effect

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