Solid-State Electronics
 2009
DOI: 10.1016/j.sse.2008.11.006
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A CAD-compatible closed form approximation for the inversion charge areal density in double-gate MOSFETs

V. Hariharan
1
,
J. Vasi
2
,
V. Ramgopal Rao
3
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Cited by 4 publications
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