A CMOS Sensor based on Single Photon Avalanche Diode for Fluorescence Lifetime Measurements

Abstract

This paper describes the design of a 7x2-pixels array, fabricated in a high voltage 0.35-µm CMOS technology, and specifically conceived for fluorescence lifetime measurements. The incident light is detected using a photodiode biased above its breakdown voltage so that an extremely high sensitivity can be achieved exploiting the intrinsic multiplication effect of the avalanche phenomenon. A single photon avalanche diode combined with an active quenching circuit and a 17-bit digital events counter have been implemented in a 180x150-µm 2 pixel. On chip master logic provides the digital control phases required by the pixel array with a fully programmability of the main timing synchronisms. A maximum operating frequency of 40MHz and an observation window within the 0-128ns range with a 0.5ns step are expected.

A Single Photon Avalanche Diode Implemented in 130-nm CMOS Technology

“…CMOS single photon detectors are based on a device known as single photon avalanche diode (SPAD). The effectiveness of SPADs has been demonstrated in a number of applications, including rangefinding [24], [26], [27] fluorescence detection [21], FCS [28], high-speed imaging [29], one- [19] and two-photon [30] FLIM, and latchup/leakage test [31]. In some of these systems however, pitch and array size are still limited due to the technologies being used, hence the push to design SPADs in deep-submicrometer (DSM) technologies.…”

Towards large scale CMOS single-photon detector arrays for lab-on-chip applications

“…The main problem with this approach is the physical size of circuitries capable of discriminating a few tens of picoseconds several millions times per second. While researchers have used on-pixel time-to-amplitude converters (TACs), they can be large [49,50]. However, the research activity in this field is extensive and massively parallel TACs and their digital equivalent, time-to-digital converters (TDCs), are expected in the near future.…”

A metasurface structure design for performance enhancement of SPAD detectors

“…Previous studies typically increased thickness to enhance light absorption. Nevertheless, excessive thickness introduces increased jitter time for SPADs, along with intricate fabrication processes and high costs [1][2]. This study presents an alternative light collection approach for thermoelectric-based photon detection.…”