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A single photon avalanche diode detector for the analysis of fluorescence phenomena is presented. The 14-pixels array, fabricated in a conventional high voltage 0.35-µm CMOS technology, allows measuring photon densities as low as 10 8 photons/cm 2 s. Each 180x150-µm 2 pixel integrates a single photon avalanche diode combined with an active quenching circuit and a 17-bit digital events counter. On chip master logic provides the digital control phases required by the pixel array with a full programmability of the main timing synchronisms. Time-resolved measurements has been demonstrated by detecting a 10ns, 10pW (peak-power on the pixel) light pulse with a typical resolution of 80ps.

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This paper describes the design of a 7x2-pixels array, fabricated in a high voltage 0.35-µm CMOS technology, and specifically conceived for fluorescence lifetime measurements. The incident light is detected using a photodiode biased above its breakdown voltage so that an extremely high sensitivity can be achieved exploiting the intrinsic multiplication effect of the avalanche phenomenon. A single photon avalanche diode combined with an active quenching circuit and a 17-bit digital events counter have been implemented in a 180x150-µm 2 pixel. On chip master logic provides the digital control phases required by the pixel array with a fully programmability of the main timing synchronisms. A maximum operating frequency of 40MHz and an observation window within the 0-128ns range with a 0.5ns step are expected.