Single-Photon Avalanche Diode CMOS Sensor for Time-Resolved Fluorescence Measurements

A gated single-photon avalanche diode array fabricated in a conventional CMOS process for triggered systems

“…Other possibilities to apply the gating pulse are based on AC coupling [16] or high frequency sinousoidal voltages [17], but whereas the former imposes a limitation on the repetition rate due to the coupling capacitor recharge time constant, the latter keeps variable the reverse bias of the sensor during gating periods. Recently, CMOS SPAD detectors with monolithically integrated electronics to operate the gated mode were also reported for lifetime measurements [18,19]. However, a large number of transistors per pixel is needed.…”

A low-noise, single-photon avalanche diode in standard 0.13 μm complementary metal-oxide-semiconductor process

“…These devices are used in a time-correlated single-photon counting (TCSPC) mode in which arrival time histograms are recorded through time-to-digital conversion (TDC) of photon-activated pulses from the detectors. Recently, there has been work to integrate SPADs into CMOS processing to create arrays of detectors that would allow for higher frame rates with wide-field imaging 3,4,5,6,7 .…”

Improved Circuits for Single-photon Avalanche Photodiode Detectors

“…7) at the operation voltage (V OP = 67 V), which is the leakage current, is about 20 nA. The usual detection rates of single photon detection applications from the reported results are about 1 Mcps (Mcounts/s) [9]. The capacitance value determined using Eq.…”