A gated single-photon avalanche diode array fabricated in a conventional CMOS process for triggered systems

Figueras, E. Vilella; Diéguez, Ángel

doi:10.1016/j.sna.2012.01.019

Cited by 22 publications

(15 citation statements)

References 21 publications

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“…2b where the avalanche diode consists of a p þ/n-well junction surrounded by a low doped p-well [3][4][5]. This layout may violate the design rules of a standard CMOS process as the intersection of diffusion and well regions, e.g.…”

Section: Low Doped Guard Ringmentioning

confidence: 99%

“…During the last few years active R&Ds have been studying the implementation of these devices in the field of High Energy Physics and Medical Physics for the detection of ionizing particles in tracking applications [4,5] opening a new promising path of application for this type of device. A Geiger-mode avalanche diode consists of a p-n junction which is reverse biased above the breakdown voltage so that a single electron-hole pair generated in the space charge region of the junction can trigger an avalanche process by impact ionization, giving rise to a macroscopic electrical signal [1][2][3].…”

Section: Introductionmentioning

confidence: 99%

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Design guidelines for the integration of Geiger-mode avalanche diodes in standard CMOS technologies

Vignetti

Calmon

Cellier

et al. 2015

Microelectronics Journal

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Section: Low Doped Guard Ringmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Design guidelines for the integration of Geiger-mode avalanche diodes in standard CMOS technologies

Vignetti

Calmon

Cellier

et al. 2015

Microelectronics Journal

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“…However, the SPAD's photon detection efficiency (PDE) is not severely reduced, as it could be expected. A good enough PDE has been demonstrated with these sensors biased at low overvoltages [27].…”

Section: E Vilella a Diéguez / Microelectronics Journal ] (]]]]) ]mentioning

confidence: 99%

Readout schemes for low noise single-photon avalanche diodes fabricated in conventional HV-CMOS technologies

Figueras

Diéguez

2013

Microelectronics Journal

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a b s t r a c tThree different pixels based on single-photon avalanche diodes for triggered applications, such as fluorescence lifetime measurements and high energy physics experiments, are presented. Each pixel consists of a 20 mm Â 100 mm (width Â length) single photon avalanche diode and a monolithically integrated readout circuit. The sensors are operated in the gated mode of acquisition to reduce the probability to detect noise counts interferring with real radiation events. Each pixel includes a different readout circuit that allows to use low reverse bias overvoltages. Experimental results demonstrate that the three pixels present a similar behavior. The pixels get rid of afterpulses and present a reduced dark count probability by applying the gated operation. Noise figures are further improved by using low reverse bias overvoltages. The detectors exhibit an input dynamic range of 13.35 bits with short gated 'on' periods of 10 ns and a reverse bias overvoltage of 0.5 V. The three pixels have been fabricated in a standard HV-CMOS process.

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“…In this work, the gated operation is controlled by means of two external signals (RST and INH) implemented through MOS transistors (M N0 and M P0 ) [23]. The sensing node V S is connected to the readout electronics, which is based on a CMOS inverter (M P1 and M N1 ) that converts the analog voltage generated as a result of a real or noise hit into a digital pulse.…”

Section: Device Under Test (Dut)mentioning

confidence: 99%

“…Short gated 'on' periods and long gated 'off' periods allow to reduce the probability to detect the fake hits [23]. However, a low duty cycle (i.e., t on (t on þt off ) À 1 ) also reduces the probability to detect the real hits.…”

Section: Test Beam Setupmentioning

confidence: 99%

A test beam setup for the characterization of the Geiger-mode avalanche photodiode technology for particle tracking

Figueras

Alonso

Trenado

et al. 2012

Nuclear Instruments and Methods in Physics Research Section A:

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Keywords:The Geiger-mode avalanche photodiode (GAPD) CMOS EUDET/AIDA telescope Schottky detector Test beam Trigger logic unit (TLU). a b s t r a c tIt is well known that avalanche photodiodes operated in the Geiger mode above the breakdown voltage offer a virtually infinite gain and time accuracy in the picosecond range that can be used for single photon detection. However, their performance in particle detection still remains unexplored. In this contribution, we are going to expose different steps that we have taken in order to prove the efficiency of the Geiger mode avalanche photodiodes in the aforementioned field. In particular, we will present a setup for the characterization of these sensors in a test beam. The expected results of the test beam at DESY and CERN have been simulated with Geant4 and will also be exposed.

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A gated single-photon avalanche diode array fabricated in a conventional CMOS process for triggered systems

Cited by 22 publications

References 21 publications

Design guidelines for the integration of Geiger-mode avalanche diodes in standard CMOS technologies

Design guidelines for the integration of Geiger-mode avalanche diodes in standard CMOS technologies

Readout schemes for low noise single-photon avalanche diodes fabricated in conventional HV-CMOS technologies

A test beam setup for the characterization of the Geiger-mode avalanche photodiode technology for particle tracking

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