A CMOS temperature-compensated current reference

Sansen, Willy; Eynde, F. Op't; Steyaert, Michiel

doi:10.1109/4.324

Cited by 117 publications

(20 citation statements)

References 4 publications

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“…Therefore, the output current has positive temperature dependence. As reported in [14], a measured temperature coefficient of 375 ppm/°C and a power dissipation of 10 μW were obtained, but the power dissipation is still large for use with sub-microwatt operation. Additionally, although the bias current of transistors M 2 -M 11 and M 1 , M 12 have the same value, nanoampere-order current, each transistor operates in a different region of the MOSFET.…”

Section: Current References Based On Weak and Strong Inversion Regionmentioning

confidence: 76%

CMOS Voltage and Current Reference Circuits consisting of Subthreshold MOSFETs – Micropower Circuit Components for Power-Aware LSI Applications –

Ueno¹

2010

Solid State Circuits Technologies

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Section: Current References Based On Weak and Strong Inversion Regionmentioning

confidence: 76%

CMOS Voltage and Current Reference Circuits consisting of Subthreshold MOSFETs – Micropower Circuit Components for Power-Aware LSI Applications –

Ueno¹

2010

Solid State Circuits Technologies

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“…3); however, slightly more sophisticated circuit topologies could be used for reducing the spread of these currents (e.g. see [18][19][20]). …”

Section: Low Voltage Low Power Compact Ptat Temperature Sensormentioning

confidence: 99%

Low Voltage, Low Power, Compact, High Accuracy, High Precision PTAT Temperature Sensor for Deep Sub-micron CMOS Systems

Falconi

Fratini

D’Amico

et al. 2008

2008 IEEE International Symposium on Circuits and Systems (ISCAS)

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Temperature measurement is becoming increasingly important in integrated circuits and microsystems; nevertheless, existing techniques for the integration of high accuracy, high precision temperature sensors are not optimal for deep submicron CMOS processes. Here we describe a low voltage, low power, compact, high accuracy, high precision temperature sensor for deep sub-micron CMOS systems; our approach takes advantage of charge balancing and charge sharing for low current consumption, does not use resistors for compactness, and takes advantage of both PTAT and autozero techniques for high accuracy and high precision; the circuit can be operated at low supply voltages. As a proof of concept, we report transistor level simulations in a standard 0.13µm process; the sensor only sinks about 6 from a 1.2V supply voltage, achieving a power dissipation as low as 7.2 W.

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“…Classically, circuits like Bandgap voltage or current reference are built with bipolar transistors. The related PTAT voltage is derived from the intrinsic thermal voltage which directly depends to the absolute temperature [7][8][9][10]. However, the current design has been implemented with a full CMOS process.…”

Section: Compensation Principlementioning

confidence: 99%

2.45-GHz-CMOS temperature compensated multi-controlled oscillator for IEEE 802.15 wireless PAN

Beaupre

Rahajandraibe

Zaid

2006

Analog Integr Circ Sig Process

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A 2.45 GHz Multi-Controlled Oscillator (MCO) has been designed using a CMOS 0.28 µm STMicroelectronics technology for use in frequency synthesizer and open loop FSK modulation circuit in multi-band IEEE 802.15 Wireless Personal Area Network (PAN) applications. Simple structure allowing multiple frequency control has been adopted so that the VCO maintains its center frequency and tuning range throughout − 40 • C to 120 • C by the way of a Proportional To Absolute Temperature (PTAT) biasing scheme. Simulations and measurements show the sensitivity of the VCO center frequency has been reduced from 1300 ppm/ • C to 73 ppm/ • C, while a phase noise of − 96 dBc/Hz @ 1 MHz offset with a power consumption of 18 mW have been achieved.

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A CMOS temperature-compensated current reference

Cited by 117 publications

References 4 publications

CMOS Voltage and Current Reference Circuits consisting of Subthreshold MOSFETs – Micropower Circuit Components for Power-Aware LSI Applications –

CMOS Voltage and Current Reference Circuits consisting of Subthreshold MOSFETs – Micropower Circuit Components for Power-Aware LSI Applications –

Low Voltage, Low Power, Compact, High Accuracy, High Precision PTAT Temperature Sensor for Deep Sub-micron CMOS Systems

2.45-GHz-CMOS temperature compensated multi-controlled oscillator for IEEE 802.15 wireless PAN

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