A compact LTCC-based Ku-band transmitter module

Lee, Chang-Ho; Sutono, A.; Han, Sangwoo; Lim, Kyutae; Pinel, S.; Tentzeris, E.M.; Laskar, J.

doi:10.1109/tadvp.2002.805315

Cited by 71 publications

(6 citation statements)

References 10 publications

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“…As indicated in Fig. 1, several Ku-band transmitters are demonstrated with the super-heterodyne architecture [14][15][16]. With the upconversion mixer and up-sideband operation, the intermediate frequency (IF) signal is converted to radio frequency (RF, fRF = fLO + fIF) or image signals (IM, fIM = fLO -fIF).…”

Section: Introductionmentioning

confidence: 99%

A Ku-band transmitter front-end in 65-nm CMOS with >45-dBc image-rejection ratio and >43-dBc LOFT suppression

Duan

Chen

Wang

et al. 2023

IEICE Electron. Express

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This paper presents a fully integrated Ku-band transmitter frontend with high image rejection ratio (IRR), local oscillator feedthrough (LOFT) suppression, gain and output power for point-to-point (P2P) communication. To avoid the bulky off-chip image-rejection filter, the Hartley transmitter structure is employed, in which frequency plan is undertaken to improve the IRR and LOFT performance, and a two-stage polyphase filter (PPF) and an in/quadrature-phase (I/Q) Gilbert mixer are utilized to improve the IRR further. With the capacitive neutralization and transformer-based series power combining techniques, a two-stage power amplifier (PA) is used to obtain high gain and output power. In the LO buffer, a flexible phase inverting cascode structure is used to achieve reliable upsideband operation, and the inductive peaking technique and cross-coupled transistor pair are employed to promote the LO swing. Fabricated in a 65nm CMOS process, the proposed Ku-band transmitter occupies a chip area of 0.98 mm 2 , and consumes 304-mW power consumption from a 1.2-V supply voltage. With measurements, over 15.8-17.9-GHz radio frequency (RF) bandwidth, the transmitter achieves an IRR and LOFT suppression ratio of 45-55 and 43-52 dBc, respectively. Moreover, it exhibits a conversion gain of 28.5 dB, an output 1-dB compression point (OP1dB) of 13.3 dBm and a saturated output power (Psat) of 16 dBm.

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Section: Introductionmentioning

confidence: 99%

A Ku-band transmitter front-end in 65-nm CMOS with >45-dBc image-rejection ratio and >43-dBc LOFT suppression

Duan

Chen

Wang

et al. 2023

IEICE Electron. Express

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“…The main implementations of SiP are through ceramic substrate, organic substrate and silicon substrate dividing by substrate material. Because of the good electrical performance and high reliability of ceramic package, early RF systems mostly adopted integration solutions based on ceramic packages [10,11,12,13,14,15,16], but stacked ceramic packages are costly, heavy, and hard to fabricate. Besides, the 3D packaging form based on organic substrates has the disadvantages of poor heat dissipation and low process accuracy although the packaging cost is low [17,18,19,20,21,22,23].…”

Section: Introductionmentioning

confidence: 99%

Design of a Ka-band receiver front end using Si-based system in package

Zhu

Jun

Wang

et al. 2021

IEICE Electron. Express

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This letter presents a Ka-band receiver front end in the form of system in package using silicon substrate. The front end adopts a dualchannel superheterodyne structure, two GaAs downconverter chips and a power divider chip are integrated on the silicon substrate with an embedded substrate integrated waveguide bandpass filter. Wire-bonding is used for connections and unique impedance matching structure is designed and embedded into the GSG transmission line to compensate for additional insertion loss. The test results show a conversion gain of -13.4 dB without the gain of low noise amplifier. The work in this letter is one of few presentation of a RF system in the form of stacked silicon system in package, revealing the feasibility of stacked silicon in complex RF system implement.

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“…The multilayer LTCC and the systems-on-package (SOP) implementations are capable of overcoming these issues by integrating active and passive components on one board. Various Ku-band filters have been reported in the literature using different designs and manufacturing methods such as defect ground structure (DGS), interdigital structure, coupled line filters, and couple strip line filters have been integrated using LTCC technology [1][2][3]. However, improvement in filter performance and better integration methods with microwave monolithic integrated circuit (MMIC) and radio frequency (RF) microelectromechanical systems (MEMS) technology as used in WiFi and WiMAX applications [4] can be used to improve integration and reduce power consumption.…”

Section: Introductionmentioning

confidence: 99%

“…Lower value of 2 eff leads to a high insertion loss and higher value of leads to lower insertion loss [16]. It is important to notice that improving 2 eff results in decreased factor, and so optimization of both parameters is defined by one figure of merit (FOM), which is a product of 2 eff × [16]. In filter applications, it has been shown that this FOM parameter is inversely proportional to filter insertion loss [16].…”

Section: Introductionmentioning

confidence: 99%

Design and Analysis of Wideband Ladder-Type Film Bulk Acoustic Wave Resonator Filters in Ku-Band

Nor

Shah

Singh

et al. 2013

Active and Passive Electronic Components

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This paper presents the design of ladder-type filters based on film bulk acoustic wave resonator (FBAR) in Ku-band. The proposed FBAR filter has an insertion loss of −3 dB, out-of-band rejection of −12 dB and 3 dB bandwidth of 1.0 GHz from 15 GHz to 16 GHz. Based on the characteristics of the FBAR filter, the expected characteristics of FBAR resonators are determined by using the 1D numerical analysis. This design proves that it is possible to design a wide-bandwidth FBAR filter in Ku-band.

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A compact LTCC-based Ku-band transmitter module

Cited by 71 publications

References 10 publications

A Ku-band transmitter front-end in 65-nm CMOS with >45-dBc image-rejection ratio and >43-dBc LOFT suppression

A Ku-band transmitter front-end in 65-nm CMOS with >45-dBc image-rejection ratio and >43-dBc LOFT suppression

Design of a Ka-band receiver front end using Si-based system in package

Design and Analysis of Wideband Ladder-Type Film Bulk Acoustic Wave Resonator Filters in Ku-Band

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