A compact noise model for carbon nanotube FETs

Landauer, Gerhard Martin; González, José

doi:10.1109/iscdg.2012.6359993

Cited by 9 publications

(14 citation statements)

References 16 publications

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“…8 it has been shown that shot noise mainly contributes to the total noise over all frequency range. This trend has been reported in [6,30,43], while flicker noise does at low frequencies, the same trend has been found in [30,[35][36][37].…”

Section: Resultssupporting

confidence: 86%

“…The carrier injection in CNTFETs will be affected as a consequence of the potential barriers in the channel [5,29,30]. The carrier injection through the potential barrier, when a low carrier density is present in the channel, follows a Poisson's probability distribution.…”

Section: Shot Channel Noisementioning

confidence: 99%

“…Flicker noise presents an inversely proportional power spectral density as a function of the frequency. Previous studies refer that flicker noise is specially large in CNTFETs [30,[35][36][37] and it is related to the total number of charge carriers [35].…”

Section: Flicker Noise (1/f )mentioning

confidence: 99%

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Small-signal parameters extraction and noise analysis of CNTFETs

Ramos-Silva

Pacheco‐Sanchez

Enciso-Aguilar³

et al. 2020

Semicond. Sci. Technol.

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The use of carbon nanotube (CNT) field-effect transistors (FETs) in microwave circuit design requires an appropriate, immediate and efficient description of their performance. This work describes a technique to extract the parameters of an electrical equivalent circuit for CNTFETs. The equivalent circuit is used to model the dynamic and noise performance at low-and highfrequency of different CNTFET technologies, considering extrinsic and intrinsic device parameters as well as the contact resistance. The estimation of the contact resistance at the metal/CNTs interfaces is obtained from a Y-function based extraction method. The noise model includes four noise sources: thermal noise, thermal channel noise, shot channel noise and flicker noise. The proposed model is compared with a compact model calibrated to hysteresis-free experimental data from a high-frequency multi-tube (MT)-CNTFET technology. Additionally, it has been applied to experimental data from another fabricated MT-CNTFET technology. The comparison in both cases shows a good agreement between reference data (simulation and experimental) and results from the proposed model. Low-and high-frequency noise projections of the fabricated reference device are further studied. Noise results from both studied technologies show that shot noise mainly contributes to the total noise due to the presence of Schottky barriers at contacts and along the channel.

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Section: Resultssupporting

confidence: 86%

Section: Shot Channel Noisementioning

confidence: 99%

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Small-signal parameters extraction and noise analysis of CNTFETs

Ramos-Silva

Pacheco‐Sanchez

Enciso-Aguilar³

et al. 2020

Semicond. Sci. Technol.

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“…Its value is between 0 and 1 and the value of F can be taken from empirical graph in Ref. 19. In this paper the Fano factor used has been obtained by fitting the curves reported in.…”

Section: A Brief Review Of Cntfet and Mosfet Modelmentioning

confidence: 99%

Analysis of Noise in Current Mirror Circuits Based on CNTFET and MOSFET

Marani

Perri

2022

ECS J. Solid State Sci. Technol.

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In this paper we present a comparative analysis of noise performance of carbon nanotube field effect transistors (CNTFETs) and metal oxide semiconductor field effect transistors (MOSFETs), through the design of two circuits: a basic current mirror and self-bias current mirror, each time with different current values. For this aim we use a semi-empirical compact CNTFET model, already proposed by us, including noise source contributions, and the BSIM4 model for the MOS device. Then we analyze and discuss the spectral density of output noise current, comparing the two considered technology. The software used is Advanced Design System, compatible with the Verilog A programming language.

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“…This classical theory is not satisfactory for white noise in short-channel devices. In these devices it is necessary to consider a white noise gamma factor equals to 2 or 3 [28].…”

Section: ) Channel Thermal Noise and Shot Noisementioning

confidence: 99%