A Compact Solid-State UV Flame Sensing System Based on Wide-Gap II–VI Thin Film Materials

Liu, Yi; Pang, Liang Xi; Liang, Jing; Cheng, Man Kit; Chen, Jun Shu; Lai, Ying Hoi; Sou, Iam Keong

doi:10.1109/tie.2017.2740842

Cited by 17 publications

(11 citation statements)

References 34 publications

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“…In 2018, Liu et al developed a compact solid-state UV flame sensing system based on a wide bandgap II–VI group thin film semiconductor. 122 The MBE-grown Cr/ZnSSe Schottky barrier UVPD is used as the UV light sensing element. In this sensing system, the average gain of the amplification circuit is 16 600, and the feedback resistance is 50 GΩ.…”

Section: Ii–vi Group Semiconductor Based Uv Photodetectors and Applic...mentioning

confidence: 99%

Progress in ultraviolet photodetectors based on II–VI group compound semiconductors

et al. 2022

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Section: Ii–vi Group Semiconductor Based Uv Photodetectors and Applic...mentioning

confidence: 99%

Progress in ultraviolet photodetectors based on II–VI group compound semiconductors

et al. 2022

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“…The flame can radiate in the three parts of the spectrum, namely, ultraviolet, infrared and visible light. Ten percentage of the flame radiates in the ultraviolet light region, and the remaining 90% of the flame radiates in the infrared and visible light regions (Shekhar et al, 2012;Liu Y. et al, 2017;Gaur et al, 2019), most visible light areas are red and yellow caused by carbon in fire, so infrared and ultraviolet light are generally detected. According to research, CNTs react to radiation, which means that this response can be used to detect various radiation sources, such as those from flames.…”

Section: Flame Sensor Based On Carbon Nanotubesmentioning

confidence: 99%

Application Status of Carbon Nanotubes in Fire Detection Sensors

Xiao

Weng

et al. 2020

Front. Mater.

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With the rapid development of the city, all kinds of high-rise buildings, large shopping malls and entertainment places have been built one after another. There are some hidden dangers of fire accidents. Effective prevention and monitoring of fire is the focus of fire prevention and control field. As the information source of fire prevention and control, the preparation of fire detection sensor with high sensitivity and short response time is of great significance for fire prevention and monitoring. At present, the commonly used fire detection sensors mainly include CO sensor, temperature sensor and flame sensor. The sensors detect the characteristic parameters in the fire environment and converts non-electric signals such as gas, temperature, and flame light into electric signals to achieve the purpose of fire warning. With the development of material technology in recent years, especially the development of Carbon Nanotube (CNT) technology, a new fire detection sensor represented by CNT materials has emerged. In this paper, the research progress of CNTs in fire detection sensors is reviewed. The applications of CNTs in CO detection, flame light detection and temperature detection are discussed in detail. Finally, the development trend of fire detection sensors based on CNTs is proposed, and the development direction of fire detection sensors in the Internet of things is prospected.

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“…UV photodetectors (PDs) have been widely used in civil and military applications, such as optical communication, [ 1–3 ] high‐voltage corona detection, [ 4,5 ] ozone layer monitoring, [ 5,6 ] flame sensing, [ 7,8 ] and missile plume detection. [ 9 ] Nowadays, high‐performance UV PDs have to meet the “5S” requirements, i.e., high sensitivity , high speed , high signal‐to‐noise ratio , high spectrum selectivity , and high stability .…”

Section: Introductionmentioning

confidence: 99%

Self‐Powered and Spectrally Distinctive Nanoporous Ga₂O₃/GaN Epitaxial Heterojunction UV Photodetectors

Chen

Zhang

et al. 2021

Advanced Photonics Research

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Herein, self‐powered spectrally distinctive UV photodetectors (PDs) based on nanoporous epitaxial Ga2O3/GaN heterojunctions grown by metalorganic chemical vapor deposition (MOCVD) are reported. The nanoporous structures are formed by a novel self‐reactive etching (SRE) method, which significantly enhances the device performance. PDs with different porosities are fabricated and compared. In the self‐powered mode, the PD with the highest nanopore porosity exhibits the best performance, with an ultralow dark current of 0.04 nA, a fast photoresponse speed, and a high responsivity of 43.9 mA W−1 (35.8 mA W−1) under 254 nm (365 nm) illumination, which is 800% higher than that of the reference device without the porous structure. Furthermore, opposite current polarities are observed in the PDs under different illumination spectra, the mechanism of which is explained by the carrier transportation using the device band diagrams. This phenomenon can be used to distinguish different incident spectra, opening the door to more new applications. This work represents one of the first spectrally distinctive self‐powered UV PDs based on nanoporous Ga2O3/GaN heterojunctions and significantly benefits the development of multifunctional UV PDs.

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A Compact Solid-State UV Flame Sensing System Based on Wide-Gap II–VI Thin Film Materials

Cited by 17 publications

References 34 publications

Progress in ultraviolet photodetectors based on II–VI group compound semiconductors

Progress in ultraviolet photodetectors based on II–VI group compound semiconductors

Application Status of Carbon Nanotubes in Fire Detection Sensors

Self‐Powered and Spectrally Distinctive Nanoporous Ga₂O₃/GaN Epitaxial Heterojunction UV Photodetectors

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A Compact Solid-State UV Flame Sensing System Based on Wide-Gap II–VI Thin Film Materials

Cited by 17 publications

References 34 publications

Progress in ultraviolet photodetectors based on II–VI group compound semiconductors

Progress in ultraviolet photodetectors based on II–VI group compound semiconductors

Application Status of Carbon Nanotubes in Fire Detection Sensors

Self‐Powered and Spectrally Distinctive Nanoporous Ga2O3/GaN Epitaxial Heterojunction UV Photodetectors

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Product

Resources

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Self‐Powered and Spectrally Distinctive Nanoporous Ga₂O₃/GaN Epitaxial Heterojunction UV Photodetectors