A comparative performance analysis of 10 nm Si nanowire and carbon nanotube field effect transistors

Khan, Imtiaj; Morshed, Ovishek; Mominuzzaman, Sharif Mohammad

doi:10.1109/nano.2017.8117443

Cited by 4 publications

(7 citation statements)

References 16 publications

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“…The theory of ballistic nanotransistors [8] implies that the application of electric field between the drain and the source of a nanotransistor would induce a non‐equilibrium mobile charge in the channel according to [16]

normalΔ Q = ()(, N_{S} + N_{D} - N_{0}) .

Here,

N_{S}

N_{D}

and

N_{0}

are densities of the positive charges filled by the source, density of the negative charges filled by the drain and equilibrium charge densities, respectively. These densities are determined by the Fermi–Dirac probability distribution as

N_{S} = \frac{1}{2} \int_{- \infty}^{+ \infty} D ()(, E) f ()(, E - U_{normalSF}) normald E .

N_{D} = \frac{1}{2} \int_{- \infty}^{+ \infty} D ()(, E) f ()(, E - U_{normalDF}) normald E .

N_{0} = \int_{- normal∞}^{+ normal∞} D (E) f (E - E_{normalF}) d E .

Here,

D ()(, E)

is the density of states contributed by the lower sub‐band;

E_{F}

is the Fermi level; f is the Fermi probability function; and E represents the energy levels per nanotube unit length, whereas

…”

Section: Methodsmentioning

confidence: 99%

“…Previous works [16] have emphasised on the development of equations for the transmission coefficient due to phonon scattering. The effective phonon scattering mean free path in semiconducting nanotubes can be computed by equations [8–11]

\begin{matrix} right leftthickmathspace.5em \\ \frac{1}{l_{sc} (V_{x})} & = \frac{1}{l_{ap}} (][, 1 - \frac{1}{1 + e^{false(false(E_{F} - V_{SC} + q V_{x} false) / K T false)}}) \\ + \frac{1}{l_{op}} (][, 1 - \frac{1}{1 + e^{false(false(E_{F} - q V_{SC} - h ω_{normalop} + q V_{x} false) / K T false)}}) . \end{matrix}

T_{S} = \frac{l_{normalSC} ()(, 0)}{l_{normalSC} ()(, 0) + L} .

T_{D} = \frac{l_{normalSC} ()(, V_{normalDSeff})}{l_{normalSC} ()(, V_{normalDSeff}) + L} .

\begin{matrix} right leftthickmathspace.5em \\ I_{DSP} & = \frac{2 q k T}{π ...} \end{matrix}

…”

Section: Methodsmentioning

confidence: 99%

“…The theory of ballistic nanotransistors [8] implies that the application of electric field between the drain and the source of a nanotransistor would induce a non-equilibrium mobile charge in the channel according to [16]…”

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

“…On the contrary, CNT‐FET has better I ON /I OFF ratio, higher conductance and lower drain‐induced barrier lowering than SiNW‐FET. Numerous works have been done on comparing SiNW‐FET with CNT‐FET [8, 9].…”

Section: Introductionmentioning

confidence: 99%

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Diameter optimisation for highest DoB of CNT‐FETs

Khan

Morshed

Mominuzzaman

2019

Micro & Nano Letters

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Carbon nanotube (CNT) is one of the most significant materials for the development of faster and improved performance of nanoscaled transistors. This work aims at analysing a trade-off between device performance and device size of CNT-based transistor. Acoustic and optical phonon (OP) scattering along with the elastic scattering lead to the non-ballistic performances of those transistors. The main focus of this work is mainly on finding an optimum diameter to obtain the highest degree of ballisticity (DoB) from both single-walled (SWCNT-FET) and double-walled CNT field-effect transistors (DWCNT-FET). At first, an n-type SWCNT-FET has been considered and the diameter dependence on DoB has been simulated. The effects of drain voltage, gate voltage and channel length have been investigated for such characteristics followed by a comparison with DWCNT-FET structure. First of all, it has been found that DoB along with the optimum diameter increases with the increase of (V DS-V GS). The increase of channel length, however, degrades the ballistic performance demanding a higher diameter to reach the optimum point. Finally, it can be concluded that optimum diameter for DWCNT-FET reaches earlier than SWCNT-FET but at lower DoB.

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normalΔ Q = ()(, N_{S} + N_{D} - N_{0}) .

Here,

N_{S}

N_{D}

and

N_{0}

N_{S} = \frac{1}{2} \int_{- \infty}^{+ \infty} D ()(, E) f ()(, E - U_{normalSF}) normald E .

N_{D} = \frac{1}{2} \int_{- \infty}^{+ \infty} D ()(, E) f ()(, E - U_{normalDF}) normald E .

N_{0} = \int_{- normal∞}^{+ normal∞} D (E) f (E - E_{normalF}) d E .

Here,

D ()(, E)

is the density of states contributed by the lower sub‐band;

E_{F}

is the Fermi level; f is the Fermi probability function; and E represents the energy levels per nanotube unit length, whereas

…”

Section: Methodsmentioning

confidence: 99%

\begin{matrix} right leftthickmathspace.5em \\ \frac{1}{l_{sc} (V_{x})} & = \frac{1}{l_{ap}} (][, 1 - \frac{1}{1 + e^{false(false(E_{F} - V_{SC} + q V_{x} false) / K T false)}}) \\ + \frac{1}{l_{op}} (][, 1 - \frac{1}{1 + e^{false(false(E_{F} - q V_{SC} - h ω_{normalop} + q V_{x} false) / K T false)}}) . \end{matrix}

T_{S} = \frac{l_{normalSC} ()(, 0)}{l_{normalSC} ()(, 0) + L} .

T_{D} = \frac{l_{normalSC} ()(, V_{normalDSeff})}{l_{normalSC} ()(, V_{normalDSeff}) + L} .

\begin{matrix} right leftthickmathspace.5em \\ I_{DSP} & = \frac{2 q k T}{π ...} \end{matrix}

…”

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Diameter optimisation for highest DoB of CNT‐FETs

Khan

Morshed

Mominuzzaman

2019

Micro & Nano Letters

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Diagnostics of Tuberculosis with Single-Walled Carbon Nanotube-Based Field-Effect Transistors

Wang,

Shao,

Liu

et al. 2024

ACS Sens.

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Tuberculosis (TB) is still threatening millions of people's lives, especially in developing countries. One of the major factors contributing to the ongoing epidemic of TB is the lack of a fast, efficient, and inexpensive diagnostic strategy. In this work, we developed a semiconducting single-walled carbon nanotube (SWCNT)-based field-effect transistor (FET) device functionalized with anti-Mycobacterium tuberculosis antigen 85B antibody (Ab85B) to detect the major M. tuberculosis-secreted antigen 85B (Ag85B). Through optimizing the device fabrication process by evaluating the mass of the antibody and the concentration of the gating electrolyte, our Ab85B-SWCNT FET devices achieved the detection of the Ag85B spiked in phosphate-buffered saline (calibration samples) with a limit of detection (LOD) of 0.05 fg/ mL. This SWCNT FET biosensor also showed good sensing performance in biological matrices including artificial sputum and can identify Ag85B in serum after introducing bovine serum albumin (BSA) into the blocking layer. Furthermore, our BSA-blocked Ab85B-SWCNT FET devices can distinguish between TB-positive and -negative clinical samples, promising the application of SWCNT FET devices in point-of-care TB diagnostics. Moreover, the robustness of this SWCNT-based biosensor to the TB diagnosis in blood serum was enhanced by blocking SWCNT devices directly with a glutaraldehyde cross-linked BSA layer, enabling future applications of these SWCNT-based biosensors in clinical testing.

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Impact of strained channel on electrical properties of Junctionless Double Gate MOSFET

Kaharudin

Salehuddin

Zain

et al. 2020

J. Phys.: Conf. Ser.

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Application of strained channel in Metal-oxide-semiconductor Field Effect Transistors (MOSFET) technology influences the electrical properties due to the significant changes in the energy band structure of silicon lattices. Thus, in this paper, a comprehensive analysis is conducted to investigate the impact of strained channel towards several electrical properties of junctionless double-gate MOSFET. The comparative analysis is carried out by simulating two different sets of device structure which are JLDGM device (without strain) and junctionless double-gate strained MOSFET (JLDGSM) device. The results show that the strained channel has improved the on-state current (ION), on-off ratio, transconductance (gm) and transconductance generation factor (TGF) by approximately 58 %, 98%, 98%, and 44% respectively. The significant improvement is mainly attributed to the presence of biaxial strain boosting the electron mobility in the channel. The intrinsic gate delay (τint) has significantly reduced by approximately 52% as the strained channel is applied. Since the variation of intrinsic gate capacitances (Cint) is very minimal (4%) as the strained channel is applied, the gate delay is dominantly governed by the drain current. However, the application of strain channel has increased the dynamic power dissipation (Pdyn) for approximately 19% mainly due to slightly increased intrinsic gate capacitances.

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A comparative performance analysis of 10 nm Si nanowire and carbon nanotube field effect transistors

Cited by 4 publications

References 16 publications

Diameter optimisation for highest DoB of CNT‐FETs

Diameter optimisation for highest DoB of CNT‐FETs

Diagnostics of Tuberculosis with Single-Walled Carbon Nanotube-Based Field-Effect Transistors

Impact of strained channel on electrical properties of Junctionless Double Gate MOSFET

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