A comparative study of Ga(CH3)3, Ga(C2H5)3 and Ga(C4H9)3 in the low pressure MOCVD of GaAs

A comparison of TMG with TEG for the growth of InxGa1−xAs

“…For the combination TEG + TMI at 650°C (curve A) the strain varied from 1.16% to -.45% for an arsine flow of 5 cc/min ( 1.7 10 -4 mf) to 200 cc/min (6.8 10 -3 mf), respectively. 4 However, it is surprising that a lower TEG input is required to obtain lattice-match between 600°C and 650°C because the GaAs growth rate is known to decrease between 600°C and 650°C. Thus the In x Ga 1-x As is gallium deficient for low arsine flows and gallium rich for high arsine flows.…”

Vapor pressures of the adducts formed during AlGaN organometallic vapor-phase epitaxy

“…The ultimate accuracy of this method (Ϯ20%) is determined by the accuracy of the reported vapor pressures of the TMGa and TMAl precursors 10,11 and the accuracy of the major flow meters and pressure gauges. Beyond this point, condensation of solid-phase or liquid-phase adduct will occur.…”

Low-temperature MOVPE using TEGa for suppressed layer undulation in InxGa1−xAs/GaAs1−yPy superlattice on vicinal substrates

“…Mass-transportlimited growth is generally favored in MOVPE, and crystal growth at kinetically governed regime tends to become unstable [18]. When TMGa is used as the gallium source, MOVPE of GaAs is known to be kinetics-limited at below 550 1C, and the growth rate rapidly decreases with temperature [19]. In this low-temperature regime, it has been reported that methyl groups bond to the Ga atoms which are already incorporated to the surface, preventing further adsorption of metal-organic compounds on the surface and blocking the diffusion of adatoms [20,21].…”