A comparison of TMG with TEG for the growth of InxGa1−xAs

Glew, R.W.; Grim-Bogdan, Karen; Tzafaras, N.; Nakahara, S.

doi:10.1007/s11664-000-0110-8

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B Deposition Process1

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“…xAs 28 , GaAs 28 , InxGa1-xAs 29 and GaN 30 . We speculate that the oxygen content is due to contamination due to air exposure after deposition.…”

Section: B Deposition Processmentioning

confidence: 99%

Thermal chemical vapor deposition of epitaxial rhombohedral boron nitride from trimethylboron and ammonia

Souqui

Pedersen

Högberg

2019

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Epitaxial rhombohedral boron nitride films were deposited on α-Al2O3(001) substrates by chemical vapor deposition, using trimethylboron, ammonia, and with a low concentration of silane in the growth flux. The depositions were performed at temperatures from 1200 to 1485 °C, pressures from 30 to 90 mbar and N/B ratios from 321 to 1286. The most favorable conditions for epitaxy were: a temperature of 1400 °C, N/B around 964, and pressures below 40 mbar. Analysis by thin film X-ray diffraction showed that most deposited films were polytype-pure epitaxial r-BN with an out-of-plane epitaxial relationship of r-BN[001] ∥ w-AlN[001] ∥ α-Al2O3[001] and with two in-plane relationships of r-BN[110] ∥ w-AlN[110] ∥ α-Al2O3[100] and r-BN[110] ∥ w-AlN[110] ∥ α-Al2O3[1 � 00] due to twinning.

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“…xAs 28 , GaAs 28 , InxGa1-xAs 29 and GaN 30 . We speculate that the oxygen content is due to contamination due to air exposure after deposition.…”

Section: B Deposition Processmentioning

confidence: 99%