Achieving a high internal quantum efficiency in GaAs∕AlGaAs based light-emitting diodes (LEDs) for room-temperature operation at low current-density injection is crucial for applications such as optical up-converters based on the integration of LEDs and photodetectros. We report the experimental results as well as the theoretical analyses of the internal quantum efficiency of GaAs∕AlGaAs LEDs as a function of the p-doping concentration of the active region for low current injection operation. By optimizing the doping concentration, we have achieved a close to 100% internal quantum efficiency for room-temperature operation of LEDs in the low injection current-density range, i.e., around 0.1A∕cm2. An optical up-converter was fabricated using wafer-fusion technology by integrating the optimized GaAs∕AlGaAs LED with an InGaAs∕InP photodetector. The internal up-conversion quantum efficiency was measured to be 76%.
We report the direct determination of absorption losses in unstrained InGaAs/InGaAsP and InGaAs/InGaAlAs and strained InGaAs/InGaAsP layer multiple quantum well (MQW) laser structures. In the case of the unstrained structures we find a strong dependence of the absorption on carrier density indicating the presence of an intrinsic optical loss mechanism, the intervalence band absorption (IVBA). In the strained layer InGaAs/InGaAsP structures, IVBA is completely switched off. Our results explain the superiority of strained layer InGaAs MQW lasers.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.