A comparative study of the radiation hardness of silicon carbide using light ions

Radiation hardness of n-type SiC Schottky barrier diodes irradiated with MeV He ion microbeam

“…Above He irradiation fluences of 1 Â 10 11 cm À2 a significant deviation from the linear behavior of CCE decrease has been observed in some cases. Previous radiation resistance studies performed on the SBD made from n-type 4H-SiC material with similar N-doping concentration do not mention a deviation from the linear behavior of CCE if irradiated with electrons [6,12], protons [11,12] or other light ions [11]. If we restrict ourselves to only the case of the probe being the same as the damaging ion (PIB = DIB = 2 MeV He), and take into account only the results obtained for the highest bias of À400 V (Fig.…”

“…Those primary defects might annihilate or reorganize themselves with impurities to form stable deep defects. Defect accumulation in reasonably low concentrations (well below an extended defect formation threshold value) might modify electronic transport properties of charge carriers introduced into active region of a device, and consequently alter or deteriorate its performance [3][4][5][6][7][8][10][11][12][13][14][15].…”

“…In this study we investigate the radiation hardness of single crystal 4H-SiC material for particle detection in intense radiation conditions. The radiation hardness of SiC detectors has been studied using irradiation with neutrons [14], protons [11][12][13]16], gamma photons [12], electrons [6,12,13], light ions [11] and heavy ions [11,15].…”

Transport of the charge carriers in SiC-detector structures after extreme radiation fluences

“…The radiation hardness of SiC detectors has been studied using irradiation with neutrons [6], protons and gamma photons [7,8], electrons [9], light ions [10] and pions [11]. In a recent study [12] the radiation hardness of SiC Schottky diodes was analyzed after irradiation with 24 GeV protons and 1 MeV neutrons.…”

Effect of heavy proton and neutron irradiations on epitaxial 4H-SiC Schottky diodes

“…The wide bandgap of 4H-SiC (3. elevated temperature and intense radiation environments [6]. Radiation hardness studies on SiC sensors have been performed recently by means of irradiations of neutrons [7], electrons [8], protons and gamma rays [9,6], pions [10] and light ions [11]. It has been suggested [10] that operation of SiC detectors at elevated temperatures will prolong SiC detector operating lifetime.…”