A comparative study of Ti and Cr based p-ohmic contacts on high power GaAs laser diodes

Mahajan, Shivani; Sharma, Abhishek; Jain, Deepti; Saini, Hemant Kumar; Yadav, B. S.; Naik, Akshay; Jain, Alok

doi:10.1016/j.vacuum.2018.03.006

Cited by 3 publications

(2 citation statements)

References 5 publications

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“…As a prototype of the second generation semiconductor after silicon and germanium, gallium arsenide (GaAs) possesses the higher light absorption coefficient and direct bandgap characteristics. [17][18][19][20] These fascinating properties make GaAs highly promising for applications in the field of microelectronics and optoelectronics such as photodetectors, [21,22] infrared light-emitting diodes (LED), [23] laser diodes [24] and solar cells. [25][26][27] In addition, Smith et al studied the biexcitons of GaAs quantum wells by pump-probe in 1994.…”

Section: Introductionmentioning

confidence: 99%

Polarization-dependent ultrafast carrier dynamics in GaAs with anisotropic response

Li¹,

Ge²,

Wang³

et al. 2022

Chinese Phys. B

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The transient dynamics of anisotropic properties of GaAs is systematically studied by polarization-dependent ultrafast time-resolved transient absorption. Our findings revealed that the anisotropy of reflectivity was enhanced in both pump-induced and probe-induced processes, suggesting an extraordinary resonance absorption of photon-phonon coupling (PPC) with intrinsic anisotropic characteristic in carrier relaxation, regardless of the concrete crystallinity and orientation of GaAs sample. The results, delivering in-depth cognition about the polarization-dependent ultrafast carrier dynamics, also proved the paramount importance of interaction between polarized laser and semiconductor.

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Section: Introductionmentioning

confidence: 99%

Polarization-dependent ultrafast carrier dynamics in GaAs with anisotropic response

Li¹,

Ge²,

Wang³

et al. 2022

Chinese Phys. B

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show abstract

“…Somna S. Mahajan et al compared sequential evaporation Ti/Pt/Au and Cr/Au p-Ohm contacts for high power laser diode manufacturing. Finally, it can be seen that the electrical and optical properties of the laser diode formed by Ti/Pt/Au ohmic contact are superior to those of the diode formed by Cr/Au contact (Mahajan et al , 2018). Mitin et al reported the research results of n -GaAs ohmic contact resistivity of Pd/Ge/Au annealed at low temperature in different gas atmospheres.…”

Section: Introductionmentioning

confidence: 99%

Optoelectronic characterization of laser diodes with different electrode structures

Lin

Zhao

et al. 2022

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Purpose This paper aims to improve the device performance from the perspective of reducing ohmic contact resistance; the effects of different electrode structures and alloying parameters on the series resistance and power-current-voltage of laser diodes (LDs) have been investigated in this paper. Design/methodology/approach Four groups of p-GaAs side metal electrodes with different metal layer arrangements and thicknesses are fabricated for the investigated LDs. The investigated p-GaAs side electrodes are based on Ti/Pt/Au material and the n-GaAs side metal electrodes all have a same structure of Ni/Ge/Ni/Au/Ti/Pt/Au. The LDs with different electrodes were alloyed at 380°C for 60 s and 420°C for 80 s. Findings The experimental results show that the series resistance decreases by 14%–20%, the output power increases by 2%–2.2% and the conversion efficiency increases by 1.69%–2.16% for the LDs prepared with optimized alloying parameters (420°C for 80 s). The laser diode with p-GaAs side Ti/Pt/Au electrode of 30/70/100 nm has the best device characteristics under both annealing conditions. Originality/value The utilization of this improvement on ohmic contact property in electrode is not only very important for upgrading high-power LDs but also helpful for GaAs-based microelectronic devices such as HBT and monolithic microwave integrated circuit.

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Enhancement of longitudinal mode characteristic of quantum cascade laser by high-order tilted asymmetric surface grating

Liu,

Jiang,

Zhan

et al. 2023

Vacuum

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A comparative study of Ti and Cr based p-ohmic contacts on high power GaAs laser diodes

Cited by 3 publications

References 5 publications

Polarization-dependent ultrafast carrier dynamics in GaAs with anisotropic response

Polarization-dependent ultrafast carrier dynamics in GaAs with anisotropic response

Optoelectronic characterization of laser diodes with different electrode structures

Enhancement of longitudinal mode characteristic of quantum cascade laser by high-order tilted asymmetric surface grating

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