A comparative study on the magnetic and electrical properties of Bi0.89Tb0.11FeO3 and Bi0.89Tb0.11FeO3/CoFe2O4 multiferroic thin films

Tan, Guoqiang; Luo, Yangyang; Dong, Guohua; Liu, Wenlong; Ren, Huijun; Xia, Ao

doi:10.1016/j.jallcom.2014.10.129

Cited by 7 publications

(1 citation statement)

References 29 publications

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“…The magnetic hysteresis loop of single-layered CuFO film is plotted in Figure (b), and the M r and H c are 72 emu/cm 3 and 800 Oe, respectively. According to literature reports, , it can be illustrated that the increased magnetism mainly derives from the CuFO layer rather than the BFO layer. As reported, many factors, like annealing temperature and mismatch strain, have an effect on the ferromagnetic properties.…”

Section: Resultsmentioning

confidence: 97%

Resistive Switching and the Local Electric Field in Bi_0.85-xPr_0.15RE_xFe_0.97Mn_0.03O₃/CuFe₂O₄ (RE = Sr, Dy) Bilayered Thin Films

Yue

Tan

Ren

et al. 2017

ACS Appl. Mater. Interfaces

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Bilayer BiPrREFeMnO/CuFeO (BPREFMO/CuFO, RE = Sr, Dy) thin films were prepared on FTO/glass substrates by the chemical solution deposition method. The structure transition does not appear after ion doping, which is confirmed by XRD and its refined results. The samples remain in the trigonal R3c:H structure in the BFO phase and in the tetragonal I41/amd structure in the CuFO phase. The asymmetric character of leakage current density curves and resistive switching effects have been explored. And the ion substitution impacts on the resistive switching effects may be due to the existence of local fields. Under the applied electric field, carries are accumulated and arranged directionally at the interface between the BFO and CuFO layers to form the local electric field. Such local field is affected by ion dopants, and the field compensates or weakens the applied electrical field. The reinforced or weakened resistive behavior is dependent on the direction of the local field and the injection of electrons. The polarization switching currents of the BPFMO/CuFO, BPSFMO/CuFO, and BPDFMO/CuFO samples, whose distribution fields are proportional to the local electrical fields, are 0.0070, 0.0049, and 0.0074 A under the positive applied field, respectively. And the remanent polarization is increased to 74.4, 73.5, and 84.3 μC/cm of the doped samples, respectively.

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Section: Resultsmentioning

confidence: 97%

Resistive Switching and the Local Electric Field in Bi_0.85-xPr_0.15RE_xFe_0.97Mn_0.03O₃/CuFe₂O₄ (RE = Sr, Dy) Bilayered Thin Films

Yue

Tan

Ren

et al. 2017

ACS Appl. Mater. Interfaces

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Effect of the thickness of Sr2Bi4Ti5O18 transition layer on the properties of BiFeO3/Sr2Bi4Ti5O18 bilayer composite thin films

Zhao

Liu

Pan

et al. 2020

Ceramics International

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First principles investigation on the electronic, magnetic and optical properties of Bi0.8M0.2Fe0.9Co0.1O3 (M = La, Gd, Er, Lu)

Gao

Chen

Zhang

et al. 2016

Computational and Theoretical Chemistry

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A comparative study on the magnetic and electrical properties of Bi0.89Tb0.11FeO3 and Bi0.89Tb0.11FeO3/CoFe2O4 multiferroic thin films

Cited by 7 publications

References 29 publications

Resistive Switching and the Local Electric Field in Bi_0.85-xPr_0.15RE_xFe_0.97Mn_0.03O₃/CuFe₂O₄ (RE = Sr, Dy) Bilayered Thin Films

Resistive Switching and the Local Electric Field in Bi_0.85-xPr_0.15RE_xFe_0.97Mn_0.03O₃/CuFe₂O₄ (RE = Sr, Dy) Bilayered Thin Films

Effect of the thickness of Sr2Bi4Ti5O18 transition layer on the properties of BiFeO3/Sr2Bi4Ti5O18 bilayer composite thin films

First principles investigation on the electronic, magnetic and optical properties of Bi0.8M0.2Fe0.9Co0.1O3 (M = La, Gd, Er, Lu)

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A comparative study on the magnetic and electrical properties of Bi0.89Tb0.11FeO3 and Bi0.89Tb0.11FeO3/CoFe2O4 multiferroic thin films

Cited by 7 publications

References 29 publications

Resistive Switching and the Local Electric Field in Bi0.85-xPr0.15RExFe0.97Mn0.03O3/CuFe2O4 (RE = Sr, Dy) Bilayered Thin Films

Resistive Switching and the Local Electric Field in Bi0.85-xPr0.15RExFe0.97Mn0.03O3/CuFe2O4 (RE = Sr, Dy) Bilayered Thin Films

Effect of the thickness of Sr2Bi4Ti5O18 transition layer on the properties of BiFeO3/Sr2Bi4Ti5O18 bilayer composite thin films

First principles investigation on the electronic, magnetic and optical properties of Bi0.8M0.2Fe0.9Co0.1O3 (M = La, Gd, Er, Lu)

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Product

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Resistive Switching and the Local Electric Field in Bi_0.85-xPr_0.15RE_xFe_0.97Mn_0.03O₃/CuFe₂O₄ (RE = Sr, Dy) Bilayered Thin Films

Resistive Switching and the Local Electric Field in Bi_0.85-xPr_0.15RE_xFe_0.97Mn_0.03O₃/CuFe₂O₄ (RE = Sr, Dy) Bilayered Thin Films