A comparison of close-cell, stripe-cell, and orthogonal-cell low voltage superjunction trench power MOSFETs for linear mode application

Su, Yi; Bobde, Madhur; Lui, S.K.; Chang, Houchen; Jin, Qinhai; Zhang, Lei

doi:10.1109/ispsd.2018.8393669

Cited by 6 publications

(3 citation statements)

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“…To minimise the deterioration of linear mode capability with lower on-resistance it is necessary to reduce on-resistance by focussing on substrate, drift, package resistance, and channel length rather than pursuing ever decreasing cell pitches. Device structure and layout also play an important role as shown in Fig. 15 [67]. Here the superjunction structures have superior linear mode performance to a shielded-gate MOSFET for similar R DS(on) .…”

Section: Linear Mode Operationmentioning

confidence: 96%

“…Device structure and layout also play an important role as shown in Fig. 15 [67]. Here the superjunction structures have superior linear mode performance to a shielded‐gate MOSFET for similar R DS(on) .…”

Section: Robustnessmentioning

confidence: 99%

“…Here the superjunction structures have superior linear mode performance to a shielded‐gate MOSFET for similar R DS(on) . This enhanced linear mode performance for similar R DS(on) of the superjunction is in part attributed to the lower electric field at the gate leading to less severe short‐channel effects at high applied drain‐source voltages [67].…”

Section: Robustnessmentioning

confidence: 99%

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Considerations in the design of a low‐voltage power MOSFET technology

Rutter¹

2019

IET Power Electronics

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Discrete low-voltage power metal-oxide-semiconductor field effect transistors are used in a wide variety of applications with each application relying on different aspects of device behaviour. The conflicting requirements of these applications along with constraints such as legislation, industrial base, and intellectual property have resulted in a diverse array of technologies available in the market. This study outlines the many considerations that are faced when designing a highperformance silicon power MOSFET technology contrasting the trade-offs involved as factors such as on-state resistance, switching performance, reliability, and robustness in the application are optimised. 3 Intellectual property There are ∼3000 granted US patents relating to vertical doublediffused metal-oxide-semiconductor (DMOS) devices with a trench gate (classification H01 29/7813) with the number increasing at about 300 per year. In such a fiercely competitive market, protecting intellectual property is crucial. Consideration of the

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Section: Linear Mode Operationmentioning

confidence: 96%

Section: Robustnessmentioning

confidence: 99%

Section: Robustnessmentioning

confidence: 99%

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