No abstract

No abstract

Abstrud-A new IGBT with a P ' diverter which is connectedto the gate through a series resistance, is proposed in this paper. It was observed from simulations that providing a small current through the diverter resulted in a significant decrease in the device on state voltage drop. Measurements on fabricated 4KV IGBTs showed a forward voltage drop of 2.78V (at collector current density of 100Alcm2 ) for diverter current of 10mA(7.38Alcm2), as compared to 3.09V of the conventional IGBT(without a diverter). After electron irradiation, the devices had a forward voltage drop of 5.02V (at collector current density of 50Alcmz) for the same diverter current, as compared to 6.48V for the conventlonal IGBTs. Further, both the devices had nearly identical turn off time, and excellent latch-up current density.[Z] N.Thapar, and B. J. Baliga, "A new IGBT structure with a wider Safe

No abstract

No abstract