A comparison of laser- and furnace-annealed polysilicon structure

Abstract

Raman microscopy has been used for a direct comparison between furnaceand laser-annealing techniques on polysilicon, and also between phosphorus-implanted and non-implanted polysilicon samples. Variations occurring as a result of different annealing temperatures and energies have been analysed and compared to optical reflectivity data. Measurements have also been carried out to determine the uniformity and extent of anneal produced by laser annealing, and hence the success of this alternative annealing technique. It has been shown that furnace-annealed polysilicon has structural properties most closely resembling those of single-crystal silicon, with large stresses being induced in the laser annealed material.

Metal Induced Crystallization

“…Excimer laser annealing is one of the promising ways to achieve large grain size poly Si films at lower substrate temperatures. Its high costs and nonuniform grain size, however, are significant obstacles that prevent its wide use (Parr et al, 2002). The other promising technique is the solid phase crystallization method.…”

Stress induced crystallization of hydrogenated amorphous silicon

“…Excimer laser annealing is a promising way to get large grain size without high substrate temperatures. Its high costs and nonuniform grain size, however, are significant obstacles that prevent its wide use [4]. Metal induced crystallization has been used to obtain large grains at low temperatures with relatively low cost [5][6][7].…”

Growth and characterization of short-period silicon isotope superlattices

“…At this point, we see no evidence for such an unusual diffusion. Finally, we should note that Raman measurement using Ar + 514.5-nm probes the sample area of a few micrometers and the depth 0.77 Am [9]. Therefore, any fluctuation of the layer thickness will contribute to the Raman peak positions and widths obtained as an average.…”