A comparison of linear handset power amplifiers in different bipolar technologies

Abstract-This paper reviews the design of watt-level integrated CMOS RF power amplifiers (PAs) and state-of-the-art results in the literature. To reach watt-level output power from a single-chip CMOS PA, two main strategies can be identified: use of high supply voltage, and use of matching and power combination. High supply voltage limits are closely related to device design in the fabrication process. However, the maximum operating voltage can be improved by amplifier class selection, circuit solutions, and process modifications or mask changes. High output power can also be reached by the use of on-chip matching and power combination, commonly using on-chip transformers. Reliability often sets the limits for the PA design, and PA degradation mechanisms are reviewed. A compilation of state-of-the-art published results for linear and switched wattlevel PAs, as well as a few fully integrated CMOS PAs, is presented and discussed.

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“…See [35] for CMOS vs. GaAs comparison for mobile phone PAs, and [36] for comparison of different bipolar technologies for similar applications.…”

Section: A Cmos For Wireless Socmentioning

confidence: 99%

A Review of Watt-Level CMOS RF Power Amplifiers

Johansson

Fritzin

2014

IEEE Trans. Microwave Theory Techn.

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“…Nevertheless, many research activities and industrial efforts have been carried out to improve the siliconbased PA performance and displace the dominance of GaAs HBT PAs in the handset market. Recent data is more promising for CMOS GSM PAs [8] and SiGe HBT linear PAs [9]. Samsung and Amalfi are currently sending samples of saturated GSM and linear CMOS PAs to handset original equipment manufacturers (OEMs).…”

Section: Semiconductor Technologies For Rf Integrated Circuit Handsetmentioning

confidence: 99%

Evolution of RFIC Handset PAs

et al. 2010

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“…These technologies include GaAs and SiGe HBT's (for power amplifiers [2] , GaAs PHEMTs and CMOS SOI/SOS, for switches [3] , and SAW/BAW filters [4], which are all integrated into front-end modules (FEMs) with a high degree of sophistication. In addition, emerging technologies that hold considerable promise for FEMs include MEMS switches [5] and high linearity varactors [6].…”

Section: Technology Challengesmentioning

confidence: 99%