A comprehensive transport model for semiconductor device simulation

McAndrew, Colin C.; Heasell, E.L.; Singhal, K.

doi:10.1088/0268-1242/2/10/003

Cited by 28 publications

(19 citation statements)

References 9 publications

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“…The surface scattering effect on electron mobility is included by using the Yamaguchi model. 23 Electron thermal conductivity and lattice thermal conductivity are found from McAndrew et al 24 and Selberherr, 1 respectively. The saturation velocity and electron energy relaxation time may be used as adjustable parameters that best fit experimental data.…”

Section: ͑5͒mentioning

confidence: 98%

Concurrent thermal and electrical modeling of sub-micrometer silicon devices

Lai

Majumdar

1996

Journal of Applied Physics

150

105

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Moment expansion approach to calculate impact ionization rate in submicron silicon devices A model of impact ionization due to the primary hole in silicon for a full band Monte Carlo simulation High electric fields, that are characteristic of sub-micron devices, produce highly energetic electrons, lack of equilibrium between electrons, optical phonons, and acoustic phonons, and high rates of heat generation. A simple coupled thermal and electrical model is developed for sub-micron silicon semiconductor devices consisting of the hydrodynamic equations for electron transport and energy conservation equations for different phonon modes. An electron Reynolds number is proposed and used to simplify the electron momentum equation. On a case study of the metal-oxide-semiconductor field-effect transistor with 0.24 m gate length, the calculated transconductance of 0.175 1/⍀ m agreed well with measured value of 0.180 1/⍀ m at 2 V drain voltage. The maximum electron temperature is found to occur under the drain side of the gate where the electric field is the highest. Comparison with experimental data shows the predictions of optical and acoustic phonon temperature distributions to have the correct trend and the observed asymmetric behavior. Increase in substrate boundary temperature by 100°C reduces the drain current by 17% and decreases the maximum electron temperature by 8%. The first effect increases device delay and the second effect decreases the possibility of device degradation by charge trapping in the gate oxide.

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Section: ͑5͒mentioning

confidence: 98%

Concurrent thermal and electrical modeling of sub-micrometer silicon devices

Lai

Majumdar

1996

Journal of Applied Physics

150

105

View full text Add to dashboard Cite

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“…The carrier distribution function f can be divided uniquely into its even and odd parts, denoted by feo and foaa, respectively, i.e., f feo + foad (25) and feo…”

Section: Carrier and Energy Fluxes In The Energy Transport (Et) Modelmentioning

confidence: 99%

“…By substituting (25) and (28) into (1) and using the symmetry, we can obtain the relation between fev and fodd q%d F fdd= h Vkfe--'rdVVrfe"…”

Section: Carrier and Energy Fluxes In The Energy Transport (Et) Modelmentioning

confidence: 99%

“…While various simplifications and formulations of the HD model exist in the literature (see, for example, [11][12][13][14][15][16][17][18][19][20][21][22][23]), the main assumptions are the momentum relaxation time and its parametrization and the closure of the third moment.The second model originates from Stratton [3,4] and involves a very different approach. The basic formulation has been implemented for device simulation [24][25][26], although its assumptions and derivations have not been investigated in detail. It is sometime treated as a variation of the HD model with the same limitations [27].…”

Section: Introductionmentioning

confidence: 99%

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Formulation of Macroscopic TransportModels for Numerical Simulationof Semiconductor Devices

1995

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According to different assumptions in deriving carrier and energy flux equations, macroscopic semiconductor transport models from the moments of the Boltzmann transport equation (BTE) can be divided into two main categories: the hydrodynamic (HD) model which basically follows Bløtekjer's approach [1, 2], and the Energy Transport (ET) model which originates from Strattton's approximation [3, 4]. The formulation, discretization, parametrization and numerical properties of the HD and ET models are carefully examined and compared. The well-known spurious velocity spike of the HD model in simple nin structures can then be understood from its formulation and parametrization of the thermoelectric current components. Recent progress in treating negative differential resistances with the ET model and extending the model to thermoelectric simulation is summarized. Finally, we propose a new model denoted by DUET (Dual ET)which accounts for all thermoelectric effects in most modern devices and demonstrates very good numerical properties. The new advances in applicability and computational efficiency of the ET model, as well as its easy implementation by modifying the conventional drift-diffusion (DD) model, indicate its attractiveness for numerical simulation of advanced semiconductor devices

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“…The HDM has been widely used in the study of aerodynamic flow, and was suggested to study the hot electron transport in mu ltivalley semiconductor devices by Bløtekjaer [29]. Since then, several contributions have been introduced to improve the hot carrier transport models in semiconductors and the HDM in particular [30][31][32][33][34][35][36][37][38][39][40][41][42][43][44][45][46][47]. For instance, the nonparabolicity of energy bands has been included in the HDM for the first time by Thoma et al [38].…”

Section: Introductionmentioning

confidence: 99%

Yet Another Hydrodynamic Model with Correlated Parameters for Silicon Devices

El-Saba¹

2013

MSSE

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In this paper we present a complete hydrodynamic model (HDM) describing the transport of charge carriers in semiconductor devices with arbitrary band structure. The model is appended with advanced physical models fo r almost all the physical parameters of interest in modern Si Devices. These parameters are inter-related v ia the carrier energy relaxation time. An improved analytical model of the carrier heat flu x, on the basis of a fourth mo ment of the Bolt zmann transport equation (BTE), is also presented. In order to resolve the heat evacuation problems in SOI and power devices, the model is coupled with a lattice heat conservation equation. The transport of hot carriers is simu lated, according to the proposed HDM and the results are compared with the conventional data obtained using the drift-diffusion model (DDM) and MC simu lation. We show from the HD simu lation, the effect of the energy relaxat ion time value on the hot carrier transport in general and the breakdown voltage in particu lar, of both MOSFETs and bipolar devices.

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A comprehensive transport model for semiconductor device simulation

Cited by 28 publications

References 9 publications

Concurrent thermal and electrical modeling of sub-micrometer silicon devices

Concurrent thermal and electrical modeling of sub-micrometer silicon devices

Formulation of Macroscopic TransportModels for Numerical Simulationof Semiconductor Devices

Yet Another Hydrodynamic Model with Correlated Parameters for Silicon Devices

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