A Computational Study of a Heterostructure Tunneling Carbon Nanotube Field-Effect Transistor

Tahaei, Seyyedeh Hoda; Yousefi, Reza; Aderang, Habib

doi:10.1007/s11664-019-07513-y

Cited by 4 publications

(4 citation statements)

References 21 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Figure 1a shows the MFM CNT tunneling FET under investigation, which is similar to the conventional CNT tunnel FET with the exception of the gating structure, which is a simple gate metal in the conventional device, 2,15 while it is constituted by a metal-ferroelectric-metal configuration in the proposed CNT-based TFET. [26][27][28] The conventional p-i-n carbon nanotube doping profile 2,19 is shown in Fig. 1b.…”

Section: Device Structurementioning

confidence: 99%

“…13,14 For this reason, several improvement techniques have been proposed to mitigate the DSDT issue while boosting the performance of the ultrascaled CNT-TFET. Particularly, we cite some approaches, which have been reported to improve the CNT-TFET at ultrascaled regime, namely, the use of p-n doping profile, 15 dielectric engineering, 16 doping engineering, 17,18 heterostructure engineering, 19 ungated region, 20 dual-material gate design, 21 and strain engineering. 22 Therefore, more approaches and improvements techniques should be proposed to increasingly boost the performance of ultrascaled CNT-based TFETs.…”

mentioning

confidence: 99%

See 1 more Smart Citation

Improved Switching Performance of Nanoscale p-i-n Carbon Nanotube Tunneling Field-Effect Transistors Using Metal-Ferroelectric-Metal Gating Approach

Tamersit

2021

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

In this paper, the metal-ferroelectric-metal (MFM) gating design is used to boost the switching performance of the nanoscale p-i-n carbon nanotube (CNT) tunneling field-effect transistors (TFET). The modeling investigation is based on a rigorous computational approach that combines a self-consistent quantum simulation with the one dimensional Landau–Khalatnikov equation while considering ballistic transport conditions. The numerical results have revealed that the ferroelectric-induced amplified internal gate voltage is efficient in improving the switching performance of the p-i-n CNT tunneling FET. Particularly, the negative capacitance (NC) CNT tunneling FET has exhibited higher on-current, higher current ratio, steeper subthreshold swing, higher I60 factor, and faster intrinsic delay than those provided by the conventional design. In addition, the impact of the ferroelectric (FE) layer thickness on the switching figures of merit has also been assessed, where TFETs with thicker FE layers have exhibited more improved switching performance than those with thinner FE layers. The obtained results indicate that the MFM-based gating design can be an alternative improvement technique for ultrascaled p-i-n CNT tunneling FETs.

show abstract

Section: Device Structurementioning

confidence: 99%

mentioning

confidence: 99%

Improved Switching Performance of Nanoscale p-i-n Carbon Nanotube Tunneling Field-Effect Transistors Using Metal-Ferroelectric-Metal Gating Approach

Tamersit

2021

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

show abstract

“…Utilizing the band-to-band tunneling property of a transistor, tunneling FETs (TFETs) can be constructed. Tahaei et al proposed a heterojunction T-CNTFET which performs better than typical TFETs [11]. Variation in the doping profile of the CNT channel can be explored to construct a better performing device.…”

Section: Introductionmentioning

confidence: 99%

Effect of doping profile variation on nanoscale cylindrical gate carbon nanotube field-effect transistor: a computational study using nonequilibrium Green’s function formalism

Mahdi

Hossain

Hussain

et al. 2020

Semicond. Sci. Technol.

View full text Add to dashboard Cite

The scaling down of modern devices beyond 15 nm has faced major setbacks as it engendered short channel effects which were seemingly inexorable. One of the solutions proposed was to replace the conventional silicon channel with carbon nanotubes (CNTs), giving rise to the carbon nanotube field-effect transistor (CNTFET). CNTs provide unrivaled electrical and mechanical properties which make them an attractive alternative to silicon for channel materials. In this research work, a cylindrical gate CNTFET model is proposed, and its performance is studied and compared with existing experimental results. The performance of the device due to the variation in the doping profile of the source and drain is studied to realize a device that can manifest superior characteristics compared with existing devices. A model with a non-uniform doping profile is proposed that results in a significant reduction in leakage current. The characteristics upon which the performance is evaluated are the on/off current ratio (I ON/I OFF), subthreshold swing (SS), and threshold voltage. By adjusting various parameters, a device is constructed with I ON/I OFF of 4 × 106, SS of 63 mV dec−1 (approximately), and a threshold voltage of 0.45 V, which performs better than existing devices shown in the literature. All the simulations have been performed by employing the nonequilibrium Green’s function formalism with the self-consistent solution of the Schrödinger and Poisson equations.

show abstract

“…6,7 In order to improve the electrical properties of tunnel transistors, various methods have been used, including electrically doping or charge plasma, lightly doping, Schottky-Ohmic structure, multimaterial gate, and heterogeneous structures. [8][9][10][11][12][13] In most of previous studies, the main objective has been to reduce am-bipolar and leakage current and the ON-current is not significantly changed. The analog parameters of the above structures have also been less investigated.…”

mentioning

confidence: 99%

Theoretical Analysis of Tunneling GNRFET under Local Compressive Uniaxial Strain

Abbaszadeh

Yousefi

Aderang

2020

ECS J. Solid State Sci. Technol.

Self Cite

View full text Add to dashboard Cite

By applying %3 compressive local uniaxial strain on 2.5 nm of source and 2.5 nm of channel regions of tunneling graphene nanoribbon field-effect transistor (T-GNRFET), we propose a new local-strained source and channel (LSSC) T-GNRFET. Quantum simulations of the proposed structure have been done in mode-space non-equilibrium Green's function (NEGF) approach in ballistic regime. Simulation results show that in comparison with the conventional T-GNRFET of the same dimensions, the ONcurrent of the proposed structure has been improved considerably. Besides, the proposed structure enjoys better analog characteristics such as transconductance (g m ) and unity-gain frequency (f t ).

show abstract

A Computational Study of a Heterostructure Tunneling Carbon Nanotube Field-Effect Transistor

Cited by 4 publications

References 21 publications

Improved Switching Performance of Nanoscale p-i-n Carbon Nanotube Tunneling Field-Effect Transistors Using Metal-Ferroelectric-Metal Gating Approach

Improved Switching Performance of Nanoscale p-i-n Carbon Nanotube Tunneling Field-Effect Transistors Using Metal-Ferroelectric-Metal Gating Approach

Effect of doping profile variation on nanoscale cylindrical gate carbon nanotube field-effect transistor: a computational study using nonequilibrium Green’s function formalism

Theoretical Analysis of Tunneling GNRFET under Local Compressive Uniaxial Strain

Contact Info

Product

Resources

About