A controllable photoresponse and photovoltaic performance in Bi4Ti3O12 ferroelectric thin films

Highly transparent Bi4Ti3O12 thin-film electrodes for ferroelectric-enhanced photoelectrochemical processes

“…Open ). This phase, which has often been observed both in Bi 4 Ti 3 O 12 powder samples and films [52][53][54][55][56][57][58][59][60][61][62][63][64] depending on synthesis temperature, Bi:Ti molar ratio, substrate, and film growth condition, has been proven to decompose at temperatures higher than 600°C ( †ESI, Figure S1), in accordance with the literature. 65 However, such heating conditions cannot be employed in the fabrication of the BiTO layers due to the use of FTO-coated glass substrates ( †ESI, section S1).…”

“…This increment suggests a more efficient charge separation (i.e., lower charge recombination) in negatively poled BiTO electrode as a result of the ferroelectric potential within the material. Moreover, the registered current density value at zero potential, when no poling is applied (i.e., J ~ 0.65 μA•cm -2 ) is higher than the ones reported for analogous pure BiTO layers of 0.18 μA•cm -2 , 56 and 0.075 μA•cm -2 , 57 for photovoltaic applications.…”

A Ferroelectric-Photovoltaic Effect in SbSI Nanowires

“…One of the unique properties of FE-PV devices is the possibility to switch photocurrent direction by changing the spontaneous polarization direction of a ferroelectric material with an external electric field. The origin of photovoltage, generated in the FE-PV device, is usually explained taking into account bulk photovoltaic effect [10,13,14,15], domain wall theory [16,17,18], Schottky-junction effect [10,19,20], change of injection barriers, and depolarization electric field [6,10,21,22].…”

“…Up till now, a ferroelectric-photovoltaic effect has been intensively studied in bulk crystals (BiFeO 3 [23], (Pb 0.97 La 0.03 ) (Zr 0.52 Ti 0.48 )O 3 (PLZT) [22], BaTiO 3 [24]) or thin films (BaTiO 3 [9], [KNbO 3 ] 1– x [BaNi 1/2 Nb 1/2 O 3–δ ] x [25]). However, there is a small number of papers in this field relevant to nanosized ferroelectric layers, i.e., PLZT [26], Pb(Zr 20 Ti 80 )O 3 decorated with Ag nanoparticles [20], Si doped HfO 2 [27], Bi 4 Ti 3 O 12 [19], Sb-doped ZnO [28], and BiFeO 3 [6,15,16,29]. In the case of ferroelectric one-dimensional materials, the FE-PV effect has been described so far only for nanofibers [30] and nanotubes [31] of BiFeO 3 .…”

Effect of concentration of Nd3+ on the photoluminescence and ferroelectric properties of Bi4-xNdxTi3O12 films

“…It can be seen that the films exhibit obvious absorptions from 350 nm to 500 nm. In general, for the indirect transitions, the band gap energy (Eg) can be obtained via following formula [42,43]…”