A critical evaluation of the effective diffusion length determination in crystalline silicon solar cells from an extended spectral analysis

Keller, S.; Spiegel, M.; Fath, P.; Willeke, Gerd; Bücher, E.

doi:10.1109/16.701490

Cited by 10 publications

(6 citation statements)

References 7 publications

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“…Due to the high degree of approximation in the derivation of the linear model, the application is limited or can lead to erroneous results. 14,15 Several effects cause the limitations of the linear model: the linearity is not obtained for all cell designs, the influence of the emitter regions becomes more important when the cell thickness is decreased, and the influence of the internal backside reflection cannot be totally neglected. Spiegel et al 14 partly overcame this limitation by omitting the condition that L n should be larger than the penetration depth,…”

Section: Front Illuminationmentioning

confidence: 99%

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Generalized models of the spectral response of the voltage for the extraction of recombination parameters in silicon devices

Mäckel

Cuevas

2005

Journal of Applied Physics

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Analytical models of the spectral response of the voltage of silicon devices have been generalized using the concept of the internal quantum efficiency of the semiconductor. This allows the extension of models used in the analysis of the internal quantum efficiency to the spectral response of the voltage. Existing models for the spectral response of the voltage that are largely employed in the surface photovoltage technique are shown to be special cases that approximate the internal quantum efficiency. A more sophisticated model of the internal quantum efficiency, the model of Isenberg, and a model that allows the analysis of the internal quantum efficiency of rear-illuminated devices have been adapted to the spectral response of the voltage. This paves the way to analyze solar cells, Schottky devices, or chemically treated silicon wafers independently of the light intensity and using front or rear illumination. The models have been validated by comparing the analysis of the spectral response of the short-circuit current and the open-circuit voltage with computer simulations for a wide range of solar cells. The model of Isenberg has been found to give in general the best prediction of the recombination parameters for both the spectral photocurrent and photovoltage. The analysis of the spectral response of the voltage can often unveil the surface recombination rate where the spectral photovoltage fails to produce any output. The measurement of rear-junction cells showed that the surface recombination rate can be predicted equally well with either method.

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Section: Front Illuminationmentioning

confidence: 99%

“…Still, the discontinuity at 1 / ␣ = L n hampers the analysis of IQE with this expression, especially for thin wafers. 15,16 As another disadvantage, it does not include multiple reflections in the device. Isenberg et al 16 circumvented the discontinuity by using the full analytical version of IQE n with an optical model of Basore.…”

Section: Front Illuminationmentioning

confidence: 99%

Generalized models of the spectral response of the voltage for the extraction of recombination parameters in silicon devices

Mäckel

Cuevas

2005

Journal of Applied Physics

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“…In thick standard solar cells when neglecting the emitter and the space charge region contributions for wavelengths ( > 800 nm) satisfying˛W 1 (˛is the absorption coefficient) and when neglecting the back surface internal reflectivity for near-infrared region (800 nm < < 1000 nm), a linear relationship can be written between the inverse of the IQE and the penetration depth (˛− 1 ) [7,8]:…”

Section: Quantum Efficiency Analysismentioning

confidence: 99%

“…Accurate measurements of transport properties are therefore a major issue that still requires some improvements. In particular, the minority carrier diffusion length is one of the most important parameters affecting the solar cell performance that can be evaluated by light beam induced current (LBIC) and electron beam induced current (EBIC) in starting materials [5,6], or from internal quantum efficiency (IQE) [7][8][9] and I-V [10,11] silicon layers deposited on 2 in. substrates has permitted the fabrication of solar cells with a conversion efficiency Á = 9.5% [12].…”

Section: Introductionmentioning

confidence: 99%

Electrical characterisation of thin silicon layers by light beam induced current and internal quantum efficiency measurements

Sayad

Amtablian

Kaminski

et al. 2009

Materials Science and Engineering: B

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“…The modelling of photovoltaics (system or devices) is frequently employed by researchers in the field towards further analysis and understanding interactions between light and matter [ 1 - 4 ]. The determination of the current-voltage equation for the illuminated p-n junctions has been based upon the “quasi-equilibrium” approximation.…”

Section: Introductionmentioning

confidence: 99%

p-n Junction Photocurrent Modelling Evaluation under Optical and Electrical Excitation

Dervos

Skafidas

Mergos

et al. 2004

Sensors

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Based upon the quasi-equilibrium approximation, the validity of p-n junction modelling, has been experimentally investigated under synchronous electrical and optical excitation of silicon photo-diodes. The devices had areas of 8.2 mm 2 and reverse bias saturation currents of the order of 10 -10 A. Their current-voltage (I-V) response was exploited experimentally both in the dark and under various illumination levels. The quoted values for the saturation current, the ideality factor, the series resistance and the reverse-bias photocurrent are investigated for the simulation of the I-V curves via the quasi-equilibrium model. In addition, the measured I-V data have been further analysed to estimate the produced photocurrent as a function of the applied bias (forward or reverse) under given illumination levels. Comparisons between the simulated curves and the experimental data allowed a detailed photocurrent modelling validation. The proposed approach could be useful towards studying other parameters of optically activated p-n junctions such as: the bias dependence of the minority carrier diffusion lengths and/or the generated rates of electron-hole pairs (EHP).

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A critical evaluation of the effective diffusion length determination in crystalline silicon solar cells from an extended spectral analysis

Cited by 10 publications

References 7 publications

Generalized models of the spectral response of the voltage for the extraction of recombination parameters in silicon devices

Generalized models of the spectral response of the voltage for the extraction of recombination parameters in silicon devices

Electrical characterisation of thin silicon layers by light beam induced current and internal quantum efficiency measurements

p-n Junction Photocurrent Modelling Evaluation under Optical and Electrical Excitation

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