2002
DOI: 10.1109/jssc.2002.1004578
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A current-sensed high-speed and low-power first-in-first-out memory using a wordline/bitline-swapped dual-port SRAM cell

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Cited by 24 publications
(22 citation statements)
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“…Differential addressing [8] is implemented to circumvent this behavior. Here, the current level until which the FIFO is filled is saved as a difference of two pointers instead of saving it as an absolute memory address.…”
Section: Differential Addressing In Fifomentioning
confidence: 99%
“…Differential addressing [8] is implemented to circumvent this behavior. Here, the current level until which the FIFO is filled is saved as a difference of two pointers instead of saving it as an absolute memory address.…”
Section: Differential Addressing In Fifomentioning
confidence: 99%
“…All the cells are initialized to 0 before starting operation. (This can be done by a multi-cycle reset operation similar to the one in [4] or adding a global reset input to all the cells. )…”
Section: Proposed Designmentioning
confidence: 99%
“…A high-speed FIFO is usually implemented using a two-port RAM array (one port for read operation and the other for write operation) and two address pointers for tracing the read and write memory accesses [1,2,3,4]. An address pointer functions as a token-passing circuit which passes a logic 1 (the token) along its outputs, which control the word-line drivers or column selection circuits of the RAM array.…”
Section: Introductionmentioning
confidence: 99%
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“…Since the ring counter is made up of an array of D-type flip-flops (DFFs) triggered by a global clock signal and all except one DFFs have a value of "0," it is possible to disable the clock signal to most DFFs. Such a gated-clock ring counter is implemented in [6] to compose a low-power first-in-first-out (FIFO) memory.…”
Section: Introductionmentioning
confidence: 99%