A digital processing method for structural analysis of atom clusters from high resolution electron micrographs

Digital image processing of crystalline specimens examined by electron microscopy

“…The diffraction pattern consists of a phase band with the various shifted phases that were previously demonstrated experimentally by Kanaya et al (1983aKanaya et al ( ,b, 1984. In some cases, although the lattice spacing dhkl and the amplitude remain unaltered, the processed images are displaced.…”

“…The band-pass filter, in which the aperture function consists of the circular bands arranged successively, can be used to classify the clusters. Figure 5 shows the successful result of the structural analysis for ion beam yielded tungsten films; (b) and (c) are examples of cluster atom images extracted from the original (a) by the gradient operation and subsequently superimposed, by which single atoms are revealed; and (d) shows a proposed three-dimensional localization of individual tungsten atom clusters compatible with the appearance of the projection within the window shown in (a) (Kanaya et al, 1983a).…”

“…The digital structural analysis method previously described by Kanaya et al (1982aKanaya et al ( , 1983aKanaya et al ( ,b, 1984, which was applied t o images from specimens obtained with the aid of an argon-ion thinning technique (Kanaya et al, 1972), was successfully developed for the study of cadmium selenide and the observation of lattice defects (Kanaya et al, 1986a). Figure 7 shows the digital processing used.…”

Application of ion beam sputtering for high‐resolution electron microscopy

“…From the thickness ratio of deposition to d(nm) = KIt (mA. min) removal, from (9) and (121, it follows that 2 where the scaling factor f(0) depending on = 98 ( 2 ) ( X) f(e) (13) the angular distribution of sputtered atoms is determined from the measurement by a which is available with either the deposition thickness meter for the ion-beam dose mea-thickness estimation or the removal thicksured by Faraday cup, and the film density ness estimation, where r = 0.2-0.5 cm was ~2 relates with the solid target density given wed. by P2F k 0.72~2 (Kanaya et a]., 1979(Kanaya et a]., ,1983a. Figure 6 shows the measurement of the sputtering deposition thickness rate K for Af with 5 keV and 10 keV, and the fixed incident angle d4.…”