A diplexer-matching dual-band power amplifier LTCC module for IEEE 802.11a/b/g wireless LANs

Abstract

We have developed a compact dual-band (2.45 GHz) power-amplifier module with a concurrent 8OZ.llaWg) WLANs. The proposed diplexer-matching network is three-dimensionally implemented i n an LTCC of 20 dBm at 2. 4 GH& and 1s dgm at 5 2 5 G H~ with an E V M 0144% for a 54-Mbps OFDM signal. Our approach of using a concurrent dual-band PA reduces the size and cost by D * almost half compared with using a conventional parallelIn this paper, we present a compact dual-band PA module with a single amplifier chain for IEEE802.1 laiblg output-networks are three-dimensionally integrated in a substrate, which enables us to reduce the module size to 5x 5 x 1.4 mm. The PA module exhibits sufficient output power, compliant with a strict error vector magnitude (EVM) specification, for both the 2.4-and 5-GHz bands, . JdaP/GaAs HBT lor triPle-mde (*EEE WLAN systems, The proposed diplexer input-and subtrate (5 5 , , ,The ,,,duie exhibib an output power multi-layer low temperature co-fired ceramic (LTCC) 1 m.without requiring any external components or band-selecting switch, hder Terms -Diplerer, dual-band, impedance matching, LTCC. power amplifiers. wireless LANs. CIRCUIT DESIGN

A Design Technique for Concurrent Dual-Band Harmonic Tuned Power Amplifier

“…More in detail, assuming the active device behaves as a current source, the drain voltage harmonic components are related to the drain current harmonics by the load impedances , e.g., (14) where the minus sign accounts for the current direction assumed to flow towards the device. Therefore, by selecting suitable impedances, it is possible to control the voltage harmonic components, and thus to shape the time-domain voltage waveform, which is given by the following relationship: (15) where is the bias voltage, is the ratio between the magnitude of the voltage harmonic components and the fundamental one (16) and…”

A very compact power amplifier using GaN HEMTs in multilayer thin-film technology

“…In conventional CMOS monolithic microwave integrated circuit (MMIC) technology, both passive components and active devices are implemented on the same substrate [1], and the quality factors of inductors and capacitors are normally limited due to the silicon substrate loss. Depending on the application-specific requirements, the active components of some RF modules such as power amplifiers (PA) may adopt the III-V wideband gap technology, implemented on a different substrate such as GaAs, sapphire, SiC, etc [2][3][4][5][6]. Consequently, the original developed technology should be re-adjusted and it can cause a significant increment of the processing cost.…”

Dual‐band feedforward linear power amplifier for digital cellular and IMT‐2000 base‐station

“…One of these approaches consists on the implementation of microwave components by means of metamaterial transmission lines. Such lines are artificial lines consisting on a host line loaded with reactive elements, and they can be implemented by means of two main approaches: (i) the CL-loaded approach, where conventional transmission lines are loaded with series capacitances and shunt inductances [1][2][3] and (ii) the resonant-type approach, where the lines are loaded with sub-wavelength resonators, such as split-ring resonators (SRRs) or complementary split-ring resonators (CSRRs) combined with shunt inductances and series capacitances, respectively [4,5]. These lines exhibit controllable electrical characteristics (phase and characteristic impedance), beyond what can be achieved in conventional lines, because of the fact that there are more degrees of freedom.…”

“…For that reason, active studies are being done on broadband, multiband devices that can cover more than one frequency band under simultaneous operation. However, due to the rigid linearity requirements of the base-station power amplifier, the research has been limited to the mobile station power amplifier [1]. This article addresses the design of simultaneous multiband base-station linear power amplifiers (LPAs).…”